Effect of Oxidation Temperature on the Properties of CuO Thin Films Prepared by Thermal Oxidation of Sputtered Cu Thin Films

Ngamnit Wongcharoen; Thitinai Gaewdang

doi:10.4028/www.scientific.net/AMR.1098.6

Paper Titles

Heterojunction Properties of p-CuO/n-CdS Diode
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Effect of Oxidation Temperature on the Properties of CuO Thin Films Prepared by Thermal Oxidation of Sputtered Cu Thin Films
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Effect of CW-CO₂ Laser Evaporation Parameters on Structural and Physical Properties of ZnSe Film
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Spectroscopic and Electronic Properties of Layer-by-Layer Assembled Gamma-Irradiated Silver/Poly(Acrylic Acid) Nanocomposites
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γ-Irradiation Induced Synthesis of Titanium Dioxide/Poly(acrylic acid) (TiO₂/PAA) Nanocomposites and Layer-by-Layer Assembly on Glass Substrate
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I2C and HSTL IO Standard Based Low Power Thermal Aware Adder Design on 45nm FPGA
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Transistor Resizing Based Low Power Thermal Aware Adder Design on FPGA
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Corrosion Behavior of Copper in Biodiesel-Diesel-Bioethanol (BDE)
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 1098Effect of Oxidation Temperature on the Properties...

Effect of Oxidation Temperature on the Properties of CuO Thin Films Prepared by Thermal Oxidation of Sputtered Cu Thin Films

Abstract:

CuO thin films were obtained through thermal oxidation of dc magnetron sputtered metallic Cu films on glass substrates. Thermal oxidation process was performed in air at temperature ranging 300-500 °C. From XRD patterns, CuO single phase of monoclinic structure was formed at oxidation temperature beyond 450 °C whereas amorphous phase with very small grains was obtained at oxidation temperature below 450 °C. The positive sign of the Hall coefficient confirmed the p-type conductivity in all studied films. From transmission spectra, direct band gap value is varied between 2.17 and 2.83eV. From the transient photoconductivity measurements, persistent photoconductivity (PPC) behavior was observed. The decay current data were better fitted with the multiple exponential functions resulting into five slow decay times. Density of trap states corresponding to its decay time was also evaluated from the decay current data.