Heterojunction Properties of p-CuO/n-CdS Diode

Abstract:

In this paper, p-CuO/n-CdS heterojunction was prepared by thermal evaporating CdS thin films on CuO 1 mm thick ceramic pellet substrate. The electrical properties of p-CuO/n-CdS heterojunction were investigated by forward current–voltage–temperature (I–V–T) characteristics in the temperature range of 100-300 K. The junction barrier height, ideality factor, and the series resistance values of the diode evaluated by using thermionic emission (TE) theory and Cheung’s method are 0.566 eV, 5.535 and 618.24 Ω at 300 K, respectively. The junction barrier height, ideality factor and series resistance were found to be strong temperature dependence. In part of C-V measurements at room temperature, the obtained built-in potential value being 0.538 V is well consistent with the junction barrier height value evaluated from I-V measurements

• Periodical: Advanced Materials Research (Volume 1098)
• Pages: 1-5
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.1098.1
• Online since: April 2015
• Authors: Thitinai Gaewdang*, Ngamnit Wongcharoen
• Keywords: C-V Characteristics, I-V Characteristics, P-CuO/N-CdS Heterojunction

References

[1] K. Zhang, Y. Yang, E.Y.B. Pun and R. Shen: Nanotechnology Vol. 21 (2010), pp.5602-235606.

[2] F. Gao, X.J. Liu, J.S. Zhang, M.Z. Song and N. Li: J. App. Phys. Vol. 111 (2012), pp.084507-4.

[3] A. Mittiga, E. Sslza, F. Sarto, M. Tucci and R. Vasanthi: Appl. Phy. Lett. Vol. 88 (2006), pp.163502-3.

[4] A. Zainelabdin, S. Zaman, G. Amin, O. Nur and M. Willander: Appl. Phys. A Vol. 108 (2012), pp.921-928.

[5] E.H. Rhoderick and R.H. Williams in: Metal-Semiconductor Contacts, Oxford University Press, 2nd Ed. (1988).

[6] S.K. Cheung and N.W. Cheung: Appl. Phys. Lett. Vol. 49 (1986), pp.85-87.