Effect of Ultraviolet Irradiation on Photoelectric Properties of Indium Tin Oxide (ITO) Thin Film Deposited by Sol-Gel Method

Abstract:

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Transparent and conductive ITO thin films were prepared on quartz glasses by the sol-gel dip-coating method and treated by ultraviolet irradiation, with 4W (254nm), 15W (254nm), 15W (365nm) and 500W (365nm) respectively. The experimental results suggest that UV irradiation could enlarge the size of crystalline and improve the conductive property of ITO thin films significantly. The relative reduction in sheet resistance rose, resulting from increase in power and irradiating time, as well as decrease in wavelength of UV irradiation. In addition, for those samples which were treated by UV irradiation and placed at room temperature for 20 days, the internal action could cause the conductivity to rise, and decrease the minimum sheet resistance to 41.378Ω/m2.

Info:

Periodical:

Advanced Materials Research (Volumes 199-200)

Edited by:

Jianmin Zeng, Zhengyi Jiang, Taosen Li, Daoguo Yang and Yun-Hae Kim

Pages:

1756-1760

DOI:

10.4028/www.scientific.net/AMR.199-200.1756

Citation:

Q. Kang et al., "Effect of Ultraviolet Irradiation on Photoelectric Properties of Indium Tin Oxide (ITO) Thin Film Deposited by Sol-Gel Method", Advanced Materials Research, Vols. 199-200, pp. 1756-1760, 2011

Online since:

February 2011

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$35.00

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