Proposal and Fabrication of a Temperature-Field Stage with an NN-Type Peltier Device

Nobuyuki Suzuki; Hideyuki Homma; Shigeo Yamaguchi

doi:10.4028/www.scientific.net/AMR.254.183

Paper Titles

Effect of Temperature on the Electrical and Gas Sensing Properties of Polyaniline and Multiwall Carbon Nanotube Doped Polyaniline Composite Thin Films
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Fabrication of MEMS Based Microspeaker Using Bulk Micromachining Technique
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Simulation Study of Side-by-Side Spiral Coil Design for Micromagnetometer
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Fabrication and Performance Characterization of a Disposable Micropump Actuated by Piezoelectric-Disc
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Proposal and Fabrication of a Temperature-Field Stage with an NN-Type Peltier Device
p.183

Effect of Substrate Temperature on Properties of Silicon Nitride Films Deposited by RF Magnetron Sputtering
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On-Chip Trapping and Characterization of Cryptosporidium Using Surface Coated ITO-PDMS Bonded Chips
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A Novel Micromechanical Resonator Using Two-Dimensional Phononic Crystal Slab
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A New Robust Four Degree-of-Freedom Gyroscope Design
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 254Proposal and Fabrication of a Temperature-Field...

Proposal and Fabrication of a Temperature-Field Stage with an NN-Type Peltier Device

Abstract:

We have proposed and fabricated a NN-type Peltier device. The conventional Peltier devices have a structure called π-shaped, which is required to have both P-type and N-type thermoelectric materials. On the other hand, our NN-type Peltier device proposed here is only composed of N-type (or P-type) thermoelectric materials. In this study, we fabricated an NN-type Peltier device with a T-shaped stage, and the current dependence of the stage temperature was measured both for cooling and heating.