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AlN Actuator for Tunable RFMEMS Capacitor

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Abstract:

This paper presents a novel piezoelectric actuator design that achieves low curling due to residual film stress. The proposed actuator maintains the gap between the movable electrode and the fixed electrode nearly constant independent of the residual stress level, improving the reproducibility and reliability of piezoelectric devices. At 20V excitation, the actuator deflects more than 5 µm. The design also achieves a capacitor electrode around 6% of the total actuator area, which is 2.5 times greater than other reported designs. This paper demonstrates the novel actuator in a tunable capacitor, but the actuator may be used in many other applications, such as MEMS switches and micro-mirrors.

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Periodical:

Advanced Materials Research (Volume 254)

Pages:

29-33

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.254.29

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Online since:

May 2011

Authors:

Sanchitha Fernando, Tang Min, Lynn Khine, Rahul Agarwal, Kia Hian Lau, Jeffrey B.W. Soon, Ming Lin Julius Tsai

Keywords:

Aluminum Nitride (AlN), Piezoelectric Actuator, RF MEMS, Tunable Capacitor

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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References

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