Paper Titles
MOVPE Growth Window for High-Nitrogen GaAsN Alloy Films for Long Wavelength Emission
p.218
A Comparison of the Structural Quality of High-In Content InGaAsN Films Grown on InGaAs Pseudosubstrate and on GaAs Substrate
p.221
Optical Transitions in InGaPN/GaP Single Quantum Wells on GaP(100) Substrates by MOVPE
p.224
Annihilation of Threading Dislocations in Regrown GaN on Electrochemically Etched Nanoporous GaN Template with Optimization of Buffer Layer Growth
p.227
Optical Nanowires for Microwave Applications
p.230
Quantum Information Processing in Photonic Crystals
p.236
Phase Transition in Photonic Crystals Doped with Nanoparticles
p.242
InGaAsP/InP Electroabsorption Modulator with Single-Sided Large Optical Cavity by Low-Pressure MOCVD
p.246
Demonstration of the Formation of Porous Silicon Films with Superior Properties Formed on Polished (100) Si with Screen-Printed Back Contacts
p.249

Optical Nanowires for Microwave Applications

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Abstract:

In this paper, we propose to take advantage of specific properties of nanophotonics to achieve microwave functions which are difficult to get with more conventional ways. With this goal, we developed new technologies to fabricate III-V nanowaveguides. Two ways were explored: the first one by deep etching of conventional epitaxies and the second one by embedding nanowires in polymer. We show in this paper some results on first devices mainly based on nanowires embedded in polymer.

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Periodical:

Advanced Materials Research (Volume 31)

Pages:

230-235

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.31.230

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Online since:

November 2007

Authors:

Didier Decoster, Michele Carette, Marie Lesecq, D. Lauvernier, Malek Zegaoui, Dorothee Bernard, Jean Pierre Vilcot, Jean Chazelas

Keywords:

Microwave Photonics, Nanometric Waveguides, Nanophotonics

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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