Demonstration of the Formation of Porous Silicon Films with Superior Properties Formed on Polished (100) Si with Screen-Printed Back Contacts

Priyanka Singh; Shailesh N. Sharma; G. Bhagavannarayana; M. Husain; M. Lal

doi:10.4028/www.scientific.net/AMR.31.249

Paper Titles

MOVPE Growth Window for High-Nitrogen GaAsN Alloy Films for Long Wavelength Emission
p.218

A Comparison of the Structural Quality of High-In Content InGaAsN Films Grown on InGaAs Pseudosubstrate and on GaAs Substrate
p.221

Optical Transitions in InGaPN/GaP Single Quantum Wells on GaP(100) Substrates by MOVPE
p.224

Annihilation of Threading Dislocations in Regrown GaN on Electrochemically Etched Nanoporous GaN Template with Optimization of Buffer Layer Growth
p.227

Optical Nanowires for Microwave Applications
p.230

Quantum Information Processing in Photonic Crystals
p.236

Phase Transition in Photonic Crystals Doped with Nanoparticles
p.242

InGaAsP/InP Electroabsorption Modulator with Single-Sided Large Optical Cavity by Low-Pressure MOCVD
p.246

Demonstration of the Formation of Porous Silicon Films with Superior Properties Formed on Polished (100) Si with Screen-Printed Back Contacts
p.249

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 31Demonstration of the Formation of Porous Silicon...

Demonstration of the Formation of Porous Silicon Films with Superior Properties Formed on Polished (100) Si with Screen-Printed Back Contacts

Abstract:

Porous silicon (PS) layers were formed by anodization on polished substrates of (1 0 0) Si at different current densities for a fixed anodization time of 30 mins. using different screenprinted/ evaporated back contacts (Ag, Al) respectively. The PS films has been characterized by high resolution X-ray diffraction (HRXRD), photoluminescence (PL), Scanning Electron Microscopy (SEM) and Fourier Transform Infrared (FTIR) techniques respectively. Porosity and thickness of PS layers were estimated by gravimetric analysis. The properties of PS formed using screen-printed Ag & Al as the back contacts (SP-(Ag/Al)) was found to be superior as compared to the corresponding films with evaporated back contacts (EV-(Ag/Al)). The PS formed with screenprinted Ag & Al-back contacts shows better crystalline perfection, higher stability, higher PL efficiency and negligible PL decay compared to that formed with evaporated Ag & Al- as the back contact for the same current density and time of anodization.