InGaAsP/InP Electroabsorption Modulator with Single-Sided Large Optical Cavity by Low-Pressure MOCVD

Abstract:

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An InGaAsP/InP Electroabsorption Modulator (EAM) with single-sided large optical cavity (LOC) was studied and fabricated by low-pressure Metal Organic Chemical Vapor Deposition (MOCVD). Results show that the optical profile of EAM is greatly improved by the LOC structure, which is expected to increase the coupling efficiency and the optical saturation power.

Info:

Periodical:

Edited by:

S. J. CHUA, J. H. TENG, O. WADA, R. DE LA RUE and X. H. TANG

Pages:

246-248

DOI:

10.4028/www.scientific.net/AMR.31.246

Citation:

H. Yang et al., "InGaAsP/InP Electroabsorption Modulator with Single-Sided Large Optical Cavity by Low-Pressure MOCVD", Advanced Materials Research, Vol. 31, pp. 246-248, 2008

Online since:

November 2007

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Price:

$35.00

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