Paper Titles
MOVPE Growth Window for High-Nitrogen GaAsN Alloy Films for Long Wavelength Emission
p.218
A Comparison of the Structural Quality of High-In Content InGaAsN Films Grown on InGaAs Pseudosubstrate and on GaAs Substrate
p.221
Optical Transitions in InGaPN/GaP Single Quantum Wells on GaP(100) Substrates by MOVPE
p.224
Annihilation of Threading Dislocations in Regrown GaN on Electrochemically Etched Nanoporous GaN Template with Optimization of Buffer Layer Growth
p.227
Optical Nanowires for Microwave Applications
p.230
Quantum Information Processing in Photonic Crystals
p.236
Phase Transition in Photonic Crystals Doped with Nanoparticles
p.242
InGaAsP/InP Electroabsorption Modulator with Single-Sided Large Optical Cavity by Low-Pressure MOCVD
p.246
Demonstration of the Formation of Porous Silicon Films with Superior Properties Formed on Polished (100) Si with Screen-Printed Back Contacts
p.249

InGaAsP/InP Electroabsorption Modulator with Single-Sided Large Optical Cavity by Low-Pressure MOCVD

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Abstract:

An InGaAsP/InP Electroabsorption Modulator (EAM) with single-sided large optical cavity (LOC) was studied and fabricated by low-pressure Metal Organic Chemical Vapor Deposition (MOCVD). Results show that the optical profile of EAM is greatly improved by the LOC structure, which is expected to increase the coupling efficiency and the optical saturation power.

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Periodical:

Advanced Materials Research (Volume 31)

Pages:

246-248

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.31.246

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Online since:

November 2007

Authors:

H. Yang, M.K. Chin, Desmond C.S. Lim, S.Y. Lee, C.W. Lee, H.L. Zhu

Keywords:

Coupling Efficiency, Electroabsorption Modulator, Large Optical Cavity, MOCVD, Optical Profile, Saturation Power

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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