Optical Transitions in InGaPN/GaP Single Quantum Wells on GaP(100) Substrates by MOVPE

S. Sanorpim; D. Kaewket; Sukkaneste Tungasmita; R. Katayama; Kentaro Onabe

doi:10.4028/www.scientific.net/AMR.31.224

Paper Titles

Nano Size Lanthanum Doped Semiconductors: Synthesis, Characterization and their Photocatalytic Activity
p.212

Structural Investigation of Cubic-Phase InN on GaAs (001) Grown by MBE under In- and N-Rich Growth Conditions
p.215

MOVPE Growth Window for High-Nitrogen GaAsN Alloy Films for Long Wavelength Emission
p.218

A Comparison of the Structural Quality of High-In Content InGaAsN Films Grown on InGaAs Pseudosubstrate and on GaAs Substrate
p.221

Optical Transitions in InGaPN/GaP Single Quantum Wells on GaP(100) Substrates by MOVPE
p.224

Annihilation of Threading Dislocations in Regrown GaN on Electrochemically Etched Nanoporous GaN Template with Optimization of Buffer Layer Growth
p.227

Optical Nanowires for Microwave Applications
p.230

Quantum Information Processing in Photonic Crystals
p.236

Phase Transition in Photonic Crystals Doped with Nanoparticles
p.242

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Optical Transitions in InGaPN/GaP Single Quantum Wells on GaP(100) Substrates by MOVPE

Abstract:

Optical transitions in the In0.050Ga0.950P0.975N0.025/GaP lattice-matched single quantum wells (SQWs) with different well widths (LZ = 1.6 - 6.4 nm) have been investigated by low-temperature photoluminescence (PL) and PL-excitation (PLE). PL spectra showed the strong visible emission from the samples which attracted to a variety of optoelectronic device applications such as light emitting and laser diodes. Comparing to the bulk film, the PL peak position and the fundamental absorption edge of PLE spectra exhibit blue-shift, which is corresponded to the quantum confinement effect by the well. Comparison between the absorption edge of PLE spectra and the finite square well calculation demonstrate that the effective bandgap energy of the InGaPN/GaP system is might be originated mainly from the N-related localized states.