Paper Titles
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A Comparison of the Structural Quality of High-In Content InGaAsN Films Grown on InGaAs Pseudosubstrate and on GaAs Substrate
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Optical Transitions in InGaPN/GaP Single Quantum Wells on GaP(100) Substrates by MOVPE
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Annihilation of Threading Dislocations in Regrown GaN on Electrochemically Etched Nanoporous GaN Template with Optimization of Buffer Layer Growth
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Optical Nanowires for Microwave Applications
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Quantum Information Processing in Photonic Crystals
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Phase Transition in Photonic Crystals Doped with Nanoparticles
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InGaAsP/InP Electroabsorption Modulator with Single-Sided Large Optical Cavity by Low-Pressure MOCVD
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Phase Transition in Photonic Crystals Doped with Nanoparticles

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Abstract:

We have study the phenomenon on of phase transition in photonic band gap (PBG) materials doped with four-level nanoparticles in the presence of the dipole-dipole interaction. Numerical simulations for the real susceptibility have been performed for an isotropic PBG material. It is found that the real susceptibility has a singularity for a certain value of the nanostructure concentration. This is a signature of the phase transition in the system.

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Periodical:

Advanced Materials Research (Volume 31)

Pages:

242-245

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.31.242

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Online since:

November 2007

Authors:

Mahi R. Singh

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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References

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