TEM Investigation of Horizontal-Grown Silicon Nanowires

Husam Abu-Safe

doi:10.4028/www.scientific.net/AMR.324.201

Paper Titles

Evaluation of Longitudinal and Transversal Young’s Moduli for Unidirectional Composite Material with Long Fibers
p.189

Modeling Shock Induced Plasticity in Copper Single Crystal: Numerical and Strain Localization Issues
p.193

From Nanoparticles to Process: An Aberration-Corrected TEM Study of Fischer-Tropsch Catalysts at Various Steps of the Process
p.197

TEM Investigation of Horizontal-Grown Silicon Nanowires
p.201

Structural Characterization of Nano-Crystalline BaTiO₃ Powder Prepared Using Hydrothermal Method
p.205

The Crystal Structure of Dibromonitrotoluen (DBNT) C₇Br₂H₅ NO₂
p.209

Quantitative Evaluation of Strain in Epitaxial 2H-AlN Layers
p.213

Defect Interactions and Polytype Transitions
p.217

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 324TEM Investigation of Horizontal-Grown Silicon...

TEM Investigation of Horizontal-Grown Silicon Nanowires

Abstract:

Horizontal silicon nanowires were grown using thermal annealing of thin layers of aluminum on silicon substrates. The template to grow these wires was the thin aluminum layer. As the samples reached the eutectic temperature during annealing, silicon dissolved rapidly in the aluminum layer and deposited at the grain boundary in a form of silicon nanowires. Cross sectional TEM analysis indicated the crystalline structure of these wires.