TEM Investigation of Horizontal-Grown Silicon Nanowires

Abstract:

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Horizontal silicon nanowires were grown using thermal annealing of thin layers of aluminum on silicon substrates. The template to grow these wires was the thin aluminum layer. As the samples reached the eutectic temperature during annealing, silicon dissolved rapidly in the aluminum layer and deposited at the grain boundary in a form of silicon nanowires. Cross sectional TEM analysis indicated the crystalline structure of these wires.

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Periodical:

Edited by:

Maher Soueidan, Mohamad Roumié and Pierre Masri

Pages:

201-204

DOI:

10.4028/www.scientific.net/AMR.324.201

Citation:

H. Abu-Safe "TEM Investigation of Horizontal-Grown Silicon Nanowires", Advanced Materials Research, Vol. 324, pp. 201-204, 2011

Online since:

August 2011

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$35.00

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