Defect Interactions and Polytype Transitions

Jörg Pezoldt; Andrei Alexandrovich Kalnin

doi:10.4028/www.scientific.net/AMR.324.217

Paper Titles

TEM Investigation of Horizontal-Grown Silicon Nanowires
p.201

Structural Characterization of Nano-Crystalline BaTiO₃ Powder Prepared Using Hydrothermal Method
p.205

The Crystal Structure of Dibromonitrotoluen (DBNT) C₇Br₂H₅ NO₂
p.209

Quantitative Evaluation of Strain in Epitaxial 2H-AlN Layers
p.213

Defect Interactions and Polytype Transitions
p.217

Characterization of Nitrided Gate Oxide Formed by RTP for SiC MOSFET Application
p.221

Investigation of Thermo-Oxidative Polyimide Thin Film Aging at High Temperature
p.225

Suitable Characterization Methods and Insulating Materials for Devices Operating above 200 °C
p.229

Annealing Effects on Electrical and Optical Properties of N-ZnO/P-Si Heterojunction Diodes
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 324Defect Interactions and Polytype Transitions

Defect Interactions and Polytype Transitions

Abstract:

The polytype transitions are caused by disorder generation in the initial structure due to energy dissipation. The disorder is strongly related to the formation and propagation of stacking faults and partial dislocations. Collective and selective interactions between these defects result in a stability loss of the original structure leading to nonequilibrium phase transition occur if the critical point is reached. The stability of the defect subsystem was investigated in the stationary state for three types of stacking faults. The combination of the stability analysis with the defect generation processes during the different technological and devices operation processes allows predicting the critical values for the external forces and fluxes leading to phase transitions.

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Periodical:

Advanced Materials Research (Volume 324)

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217-220

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.324.217

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Online since:

August 2011

Authors:

Jörg Pezoldt, Andrei Alexandrovich Kalnin

Keywords:

Dislocation Interaction, Phase Transition, Polytypism, Silicon Carbide (SiC)

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