The polytype transitions are caused by disorder generation in the initial structure due to energy dissipation. The disorder is strongly related to the formation and propagation of stacking faults and partial dislocations. Collective and selective interactions between these defects result in a stability loss of the original structure leading to nonequilibrium phase transition occur if the critical point is reached. The stability of the defect subsystem was investigated in the stationary state for three types of stacking faults. The combination of the stability analysis with the defect generation processes during the different technological and devices operation processes allows predicting the critical values for the external forces and fluxes leading to phase transitions.