Characterization of Nitrided Gate Oxide Formed by RTP for SiC MOSFET Application

Aurore Constant; Philippe Godignon

doi:10.4028/www.scientific.net/AMR.324.221

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 324Characterization of Nitrided Gate Oxide Formed by...

Characterization of Nitrided Gate Oxide Formed by RTP for SiC MOSFET Application

Abstract:

Gate oxides for SiC lateral MOSFETs have been formed in N2O by rapid thermal processing (RTP) as an alternative to the conventional furnace process. This innovative oxidation method has not only the advantage to significantly reduce the thermal budget compared to a standard oxidation, but also to produce oxide layers with quality comparable to the one grown in a conventional furnace. Moreover, a significant improvement of the oxide quality and MOSFET performance is observed when performing in-situ a H2 anneal prior to oxidation as surface pretreatment. The channel mobility and the breakdown field of the gate oxide are considerably increased.

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Periodical:

Advanced Materials Research (Volume 324)

Pages:

221-224

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.324.221

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Online since:

August 2011

Authors:

Aurore Constant, Philippe Godignon

Keywords:

MOSFET, N₂O, Nitridation, Oxidation, RTP, Silicon Carbide (SiC)

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