New Measurement Concept of Nanometer-Level Defects on Si Wafer Surface by Using Micro Contact Sensor

Wen Jian Lu; Yuki Shimizu; Wei Gao

doi:10.4028/www.scientific.net/AMR.497.137

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 497New Measurement Concept of Nanometer-Level Defects...

New Measurement Concept of Nanometer-Level Defects on Si Wafer Surface by Using Micro Contact Sensor

Abstract:

A thermal-type contact sensor was proposed to detect small defects, the heights of which are less than 16 nm, on the wafer surface. The feasibility of the contact sensor, which detects frictional heat generated at the contact, was theoretically investigated focusing on the temperature rise of the sensor element. Simulation results with both the simple model of heat transfer and the FEM model showed that the expected temperature rise of the contact sensor is enough to be detected by the conventional electric circuit.

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Periodical:

Advanced Materials Research (Volume 497)

Pages:

137-141

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.497.137

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Online since:

April 2012

Authors:

Wen Jian Lu, Yuki Shimizu, Wei Gao

Keywords:

Contact Sensor, Frictional Heat, Heat Transfer, Wafer Inspection

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References

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