XTEM Observation of 4H-SiC (0001) Surfaces Processed by Plasma Assisted Polishing

Hui Deng; Kazuya Yamamura

doi:10.4028/www.scientific.net/AMR.497.156

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 497XTEM Observation of 4H-SiC (0001) Surfaces...

XTEM Observation of 4H-SiC (0001) Surfaces Processed by Plasma Assisted Polishing

Abstract:

We proposed a novel polishing technique named plasma assisted polishing (PAP) which combined atmospheric pressure water vapor plasma irradiation and soft abrasive polishing. Plasma irradiation oxidized the surface of workpiece and made it easier to be polished. PAP was applied to 4H-SiC, and an automatic flat surface without any scratches was obtained. In this study, we observed the processed surfaces using cross-sectional transmission electron microscopy (XTEM). The XTEM images showed us that an oxide layer with a thickness of about 20 nm was generated after plasma irradiation for 1 h, which proved the strong oxidation potential of OH radical in water vapor plasma. The surfaces processed by PAP were next observed, oxide layer was completely removed and no surface damages were introduced as the crystal structure of 4H-SiC was clearly observed and well ordered.

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Periodical:

Advanced Materials Research (Volume 497)

Pages:

156-159

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.497.156

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Online since:

April 2012

Authors:

Hui Deng, Kazuya Yamamura

Keywords:

Atmospheric Pressure Plasma, Crystal Structure, Polishing, Single Crystal Sic, XTEM

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