Metrology Method of Line Edge Roughness with Nanometer Scale Precision Using Atomic Force Microscopes

Ning Li; Xue Zeng Zhao; Wei Jie Wang

doi:10.4028/www.scientific.net/AMR.60-61.22

Paper Titles

Hydrodynamic Lubrication in a Nanoscale Bearing
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Uniaxial Stress Dependence of Electrical Properties of Ulrathin Ballistic P-Type Silicon Nanotransistor
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Optical and Electrical Properties of SnS: Ag Films as Solar Cell Absorbers
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WO₃ Nanostructures Synthesized by a Sonochemical Strategy
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Metrology Method of Line Edge Roughness with Nanometer Scale Precision Using Atomic Force Microscopes
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Scanning Ion Conductance Microscopy and its Applications in Nanobiology and Nanomedicine
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Analysis of Temperature Effects on a Fully-Symmetrical Micromachined Gyroscope
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The I-V Characteristics and Percolation Threshold of the Cement-Based Materials Filled with Multi-Walled Carbon Nanotubes
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Design of a Hybrid-Type Electrostatically Driven Microgripper Integrated Vacuum Tool
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Metrology Method of Line Edge Roughness with Nanometer Scale Precision Using Atomic Force Microscopes

Abstract:

This paper proposes a methodology method for line edge roughness (LER) measurement and characterization using atomic force microscope. The definition and origins of LER are discussed firstly. A LER quantificational method using image processing and threshold method is presented, which is used to analyze AFM images of Silicon lines and extract LER characteristics. Then the energy distribution of LER is determined by the multi-scale analysis based on wavelet transform and the parameters of multi-scale characterization were given. The experiment data shows that this method can offer an effective quantitative analysis of LER.