Raman and Electrical Analysis of Iodine-Doped Amorphous Carbon Thin Films

Abstract:

Iodine doped amorphous carbon (a-C: I) thin films were prepared by using Thermal Chemical Vapor Deposition (CVD) with deposition temperature ranging from 5000C to 7000C. The physical and electrical properties of deposited a-C:I thin films were characterized by Raman spectroscope and Solar Simulator system. The presence of 2 peaks known as Raman D peaks and Raman G peaks ensure the amorphous structure of carbon (C). As deposition temperature increase, the ID/IG ratio shows difference value, which indicates the effects of the temperature towards the a-C: I structures. An ohmic graph was obtained for the IV measurement, and the conductivity varies from 10-4 to 101 Scm-1. The photoresponse was also determined for all samples. As a reference, an undoped a-C thin film was prepared to differentiate the characteristic between a-C and a-C: I.

• Periodical: Advanced Materials Research (Volume 667)
• Pages: 281-286
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.667.281
• Online since: March 2013
• Authors: A.N. Fadzilah, Dayana Kamaruzaman, Mohamad Rusop Mahmood
• Keywords: Amorphous Carbon, Electrical Properties, Iodine Doped, Raman Spectroscopy, Thermal CVD

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