Relation of Anodisation Parameter for Nanocrystallite Size of Porous Silicon Template Studied by Micro-Raman Spectroscopy

Abstract:

Nanostructured porous silicon templates (NPSiT) were prepared by photo-electrochemical anodization of p-type crystalline silicon in HF electrolyte at different etching time. Two set anodisation parameter were observed, anodisation time nd current density applied. For set one, five samples were prepared with etching time varied from 10 to 50 minutes at 20 mA/cm2 of current density. For set two, five samples were prepared with current density varied from 5 to 40 mA/cm2 for 30 minutes. The effects of these anodisation parameter on NPSiT were observed based on nanocrystallite size. These studied was demonstrated by Raman spectroscopy. It was found that NPSiT sample with large pore diameter, which is smaller nanocrystallites size of Si between pore.

• Periodical: Advanced Materials Research (Volume 667)
• Pages: 324-328
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.667.324
• Online since: March 2013
• Authors: N.A. Asli, Mohamad Rusop, Saifollah Abdullah
• Keywords: Current Density, Etching Time, Nanocrystallites Size, Nanostructured Porous Silicon Templates, Raman Spectroscopy

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