Dielectric and Structural Properties of RF Magnetron Sputter Grown Lead Zirconium Titanate Thin Film: A Review

Abstract:

This review summarizes the current state of lead zirconium titanate (PZT) that used for energy storage based organic capacitor. The particular focus is on dielectric material PZT properties for achieving high-k dielectric constant (900-1300) concerning for DC power application. PZT is well known of its perovskite structure that related to excellent ferroelectric properties considered to have high remnant polarization and low coercive field. We review the recent literature that focused on the annealing process that affects dielectric constant and its structural property derived by radio frequency (RF) magnetron sputter.

• Periodical: Advanced Materials Research (Volume 667)
• Pages: 312-316
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.667.312
• Online since: March 2013
• Authors: Zainal Nurbaya, Zulkefle Habibah, Mohamad Rusop Mahmood
• Keywords: Annealing Process, Dielectric Constant, Lead Zirconium Titanate, RF Magnetron Sputtering

References

[1] A. Bradley and J. P. Hammes, Electrical Properties of Thin organic films, Journal of The Electrochemical Society 110 (1963) 15-22.

[2] P. Ozawa, Organic thin-film capacitor, parts, materials and packaging, IEEE Transactions on 5 (1969) 112-116.

DOI: 10.1109/tpmp.1969.1136065

[3] R. E. Cohen, Origin of ferroelectricity in perovskite oxides, Nature 358 (1992) 136-138.

DOI: 10.1038/358136a0

[4] G. H. Haertling, Ferroelectric ceramics : History and technology, Journal of American Ceramic 82 (1999) 797-818.

DOI: 10.1111/j.1151-2916.1999.tb01840.x

[5] D. Tan and P. Irwin, Polymer based nanodielectric composites, GE Gobal Research Center, USA (2005) 115-132.

[6] I. Boerasu, L. Pintilie, M. Pereira, M. I. Vasilevskiy, and M. J. M. Gomes, Competition between ferroelectric and semiconductor properties in Pb(Zr0. 65Ti 0. 35)O3 thin films deposited by sol-gel, Journal of Applied Physics 93 (2003) 4776-4783.

DOI: 10.1063/1.1562009

[7] S. K. Pandey, A. R. James, C. Prakash, T. C. Goel, and K. Zimik., Electrical properties of PZT thin films grown by sol-gel and PLD using a seed layer, Materials Science and Engineering: B 112 (2004) 96-100.

DOI: 10.1016/j.mseb.2004.06.011

[8] R. Mamazza, N. Y. Mark, R. G. Polcawich, B. H. Piekarski, P. Muralt, and G. J. Reynolds, Comparison of ferroelectric and piezoelectric properties of sol-gel grown and sputter deposited Pb(Zr, Ti)O3 thin films, IEEE International Symposium on the Applications of Ferroelectrics (2006).

DOI: 10.1109/isaf.2006.4387895

[9] S. B. Krupanidhi, N. Maffei, M. Sayer, and K. El-Assals, RF Planar magnetron sputtering and characterization of ferroelectric Pb(Zr, Ti)O3 films, Journal of Applied Physics 54 (1983) 6601-6610.

DOI: 10.1063/1.331895

[10] K. Tsuchiya, T. Kitagawa, Y. Uetsuji, and E. Nakamachi, Fabrication of smart material PZT thin films by RF magnetron sputtering method in micro actuators, JSME International Journal, Series A: Solid Mechanics and Material Engineering 49 (2006).

DOI: 10.1299/jsmea.49.201

[11] J. Yang, W. S. Kim, and p. H. H. Park, The effect of excess Pb content on the crystallization and electrical properties in sol-gel derived Pb(Zr0. 4, Ti0. 6)O3 thin films, Thin Solid Films 377-378 (2000) 739-744.

DOI: 10.1016/s0040-6090(00)01325-0

[12] A. Sakurai, T. Nakaiso, K. Nishida, A. Ando, and Y. Sakabe, Preparation and characterization of lead zirconate titanate thin films on Si substrate by metal-organic chemical vapor deposition, Key Engineering Materials 269 (2004) 61-64.

DOI: 10.4028/www.scientific.net/kem.269.61

[13] R. D. Shannon and C. T. Prewitt, Effective ionic radii in oxides and fluorides, Acta Crystallographica Section B 25 (1969) 925-946.

DOI: 10.1107/s0567740869003220

[14] G. Haertling and C. E. Land, "Hot-pressed (Pb, La)(Zr, Ti)O3 ferroelectric ceramics for electrooptic applications, Journal of American Ceramaic Society 54 (1971) 1-11.

DOI: 10.1111/j.1151-2916.1970.tb12105.x-i1

[15] I. Beshajová and L. Valenta, "The properties of thin film dielectric layers prepared by sputtering, NANOCON 5 (2009) 2-6.

[16] M. E. Raj, M. Jayachandran, and C. Sanjeeviraja, Fabrication techniques and material properties of dielectric MgO thin films-A status review, CIRP Journal of Manufacturing Science and Technology 2 (2010) 92–113.

DOI: 10.1016/j.cirpj.2010.02.003

[17] R. Thomas, S. Mochizuki, T. Mihara, and T. Ishida, Preparation of Pb(Zr, Ti )O3 thin films by RF-magnetron sputtering with single stoichiometric target : structural and electrical properties, Thin Solid Films 413 (2002) 65–75.

DOI: 10.1016/s0040-6090(02)00354-1

[18] T. Haccart, E. Cattan, and D. Remiens, Dielectric , ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates : influence of film thickness and orientation, Semiconductor Physics, Quantum Electronics & Optoelectronics 5 (2002).

DOI: 10.15407/spqeo5.01.078