Electrical Characterization of Metal Insulator Semiconductor Using ZnO Low Deposition Temperature as Semiconductor Layer

Abstract:

We report on the influence of the low deposition temperature of ZnO as semiconductor layer on the electrical characteristics of metal-insulator-semiconductor (MIS) structures. The ZnO films were deposited by radio frequency (RF) magnetron sputtering with variation of temperature from 40°C, 60°C, 80°C, 100°C and 120°C. PMMA were used as insulator layer in the MIS structures. It is found that the ZnO films grown at 120°C has better crystallinity compared to other temperature. I-V characteristics results shown that the different deposition temperature of ZnO films affect the performance of MIS.

• Periodical: Advanced Materials Research (Volume 832)
• Pages: 270-275
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.832.270
• Online since: November 2013
• Authors: Lyly Nyl Ismail, Saifullah Ali Harun, Habibah Zulkefle, Sukreen Hana Herman, Mohamad Rusop Mahmood
• Keywords: Electrical Properties, Low Temperature of ZnO, MIS, PMMA, Structural Property

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