The Ideal “Defects” of the Crystal Structure of GaAs

K.A. Iskakova; Rif Akhmaltdinov; Aisara Amaonova

doi:10.4028/www.scientific.net/AMR.936.577

Paper Titles

Assessments of Impurity Diffusion Coefficients of Selected Pure Metals in Fcc Fe
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The Properties of a Novel Green Long Afterglow Phosphor Zn₂GeO₄:Mn²⁺_0.01, Pr³⁺_0.01
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Dy³⁺ Doping Blue-Green Sr₄Al₁₄O₂₅:Eu²⁺ Phosphor for Enhancing Luminescent Properties and the Mechanism Study
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Magnetic and Electrical Property in Mg²⁺ Deficient La_1.4Sr_1.6Mn₂O₇ Perovskite
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The Ideal “Defects” of the Crystal Structure of GaAs
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Cooperative Energy Transfer of Er-Gd-Tb System in Tb³⁺, Er³⁺ Co-Doped K₂GdZr(PO₄)₃ as a Potential Visible Quantum Cutting Phosphor
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First-Principles Investigations of Electronic, Dynamic and Thermodynamic Properties of α-MnO₂
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Ultra-Multilevel-Storage Phase Change Memory
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Surface Passivation of Crystalline Silicon by a-Si:H Thin Films
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 936The Ideal “Defects” of the Crystal Structure of...

The Ideal “Defects” of the Crystal Structure of GaAs

Abstract:

The current industry needs for new results require current capabilities of computer technology can solve problems on a whole new level. This article briefly describes the algorithms for obtaining the structures and the appearance of discontinuities in the growth of crystals.

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Advanced Materials Research (Volume 936)

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577-584

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.936.577

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Online since:

June 2014

Authors:

K.A. Iskakova*, Rif Akhmaltdinov, Aisara Amaonova

Keywords:

GaAs, Semiconductor, Simulation, Structure

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