Surface Passivation of Crystalline Silicon by a-Si:H Thin Films

Yin Wang; Wei Li; An Ran Guo; Feng Yu; Jian He; Ya Dong Jiang

doi:10.4028/www.scientific.net/AMR.936.603

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 936Surface Passivation of Crystalline Silicon by...

Surface Passivation of Crystalline Silicon by a-Si:H Thin Films

Abstract:

Surface passivation of c-Si by a-Si:H thin films has been studied. In this paper, the minority carrier lifetime of 345μs (from 85μs) is obtained at optimal hydrogen flow rate (8.0sccm) by using RF-magnetron sputtering method.

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Periodical:

Advanced Materials Research (Volume 936)

Pages:

603-606

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.936.603

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Online since:

June 2014

Authors:

Yin Wang, Wei Li*, An Ran Guo, Feng Yu, Jian He, Ya Dong Jiang

Keywords:

Hydrogen Flow Rate, Minority Carrier Lifetime, Surface Passivation

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* - Corresponding Author

References

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