Te Inclusions in CdMnTe Crystal Grown by the Traveling Heater Method and their Effects on the Electrical Properties

Abstract:

The concentration and size distribution of Te inclusions in CdMnTe (CMT) are key factors in nuclear devices performance. High-concentration and large-size Te inclusions degrade the performance drastically, especially for electrical properties. In this paper, the Te inclusions along the axial and radial directions in CMT crystal grown by the Traveling Heater Method (THM) were revealed by Infrared Microscopic System. The size of Te inclusions is 5-17 μm and the concentration is (2.5-4.6) ×10⁵ cm^-3. The Current-Voltage measurements were performed and the resistivity of the CdMnTe crystal with excess Te was in the range of 10⁸-10⁹ Ωcm, and the correlation between the Te inclusions and resistivity was investigated. The large size (>17 μm) and high concentration (4.5 of ×10⁵ cm^-3) Te inclusion decrease the resistivity of the CMT crystal seriously.

• Periodical: Advanced Materials Research (Volume 936)
• Pages: 613-617
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.936.613
• Online since: June 2014
• Authors: Ping Shen, Ji Jun Zhang*, Lin Jun Wang, Jia Hua Min, Jian Huang, Xiao Yan Liang, Ke Tang, Min Shen, Lin Wang, Yi Ben Xia
• Keywords: CdMnTe, Distribution, Infrared Microscopic, Te Inclusions, Traveling Heater Method

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