Metallization of AlN for Electronics

Hiroki Yokoyama

doi:10.4028/www.scientific.net/AST.45.1594

Paper Titles

Modelling of the Current-Time Characteristics in Anodic Bonding
p.1558

Transient-Liquid-Phase and Liquid-Film-Assisted Joining of Ceramics
p.1568

Soldering and Brazing Metals to Ceramics at Room Temperature Using a Novel Nanotechnology
p.1578

Transient Liquid Phase Bonding of Ceramics and Metal Matrix Composites
p.1588

Metallization of AlN for Electronics
p.1594

New Glass Sealing Method with Lead-Free Solders
p.1604

Nickel Aluminides as a “Filler” for Joining Ceramics and Metals
p.1608

Properties Dependency of Alumina - Steel Joints on Bonding Technique
p.1614

High Temperature Plastic Flow and Ductility in Polycrystalline Oxide Ceramics: Doping Effect and Related Phenomena
p.1620

HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 45Metallization of AlN for Electronics

Metallization of AlN for Electronics

Abstract:

Aluminum nitride (AlN) is widely used in the field of electronics because it has high thermal conductivity, good electric and mechanical properties. On the other hand it has a shortcoming of being difficult to wet metals. Therefore, various contrivances are needed to form a metal film with high adhesion strength on AlN surface. In this paper we will review the vacuum technology that has been used up to now, and mention the middle thickness film printing method that will be a key technology from now on. Adhesion mechanism in the interface between AlN and metal film will be also reported.

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Advances in Science and Technology (Volume 45)

Pages:

1594-1603

DOI:

https://doi.org/10.4028/www.scientific.net/AST.45.1594

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Online since:

October 2006

Authors:

Hiroki Yokoyama

Keywords:

AlN-Metal Bonding, Co-Fired Process, Interface, Low-Cost Metallization, Patterning of Metal Film, Post-Fired Process, Reliability Test of a Metal Film

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