Potential Fluctuation in RRAM Based on Non-Stoichiometric Hafnium Sub-Oxides

Damir R. Islamov; Vladimir N. Kruchinin; Vladimir Sh. Aliev; Timofey V. Perevalov; Vladimir A. Gritsenko; Igor P. Prosvirin; Oleg M. Orlov; Albert Chin

doi:10.4028/www.scientific.net/AST.99.69

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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 99Potential Fluctuation in RRAM Based on...

Potential Fluctuation in RRAM Based on Non-Stoichiometric Hafnium Sub-Oxides

Abstract:

We study the structure of nonstoichiometric HfO_x films with variable composition using methods of XPS, spectroscopic ellipsometry, and ab initio calculations. According to XPS and optical absorption experiment data HfO_x consists of metal Hf and ~10-15% of nonstoichiometric hafnium sub-oxide HfO_y (y<2). HfO_y can be placed between HfO₂ and Hf, inside HfO₂, inside Hf. According to this model space fluctuations of chemical composition cause space fluctuations of bandgap in HfO_x. We found that transport in such electronic systems is described by percolation theory. This approach can be applied to explain LRS transport of HfO_x-based RRAM.

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Periodical:

Advances in Science and Technology (Volume 99)

Pages:

69-74

DOI:

https://doi.org/10.4028/www.scientific.net/AST.99.69

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Online since:

October 2016

Authors:

Damir R. Islamov*, Vladimir N. Kruchinin, Vladimir Sh. Aliev, Timofey V. Perevalov, Vladimir A. Gritsenko, Igor P. Prosvirin, Oleg M. Orlov, Albert Chin

Keywords:

Fluctuations, Hafnium Sub-Oxides, Low Resistance State, ReRAM, RRAM

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