The Resistive Switching Behavior of ZnO Films Depending on Li Dopant Concentration and Electrode Materials

Abstract:

Lithium (0, 1.0 and 10 at.%)-doped ZnO (LiZnO) polycrystalline thin films were deposited on Pt/SiO₂, LaB₆/Al₂O₃, Au/SiO₂ and 20 at.% fluorine-doped SnO₂(FTO)/glass substrates by an e-beam evaporation method. Metal/LiZnO/Metal sandwich structures were constructed by depositing different top electrodes (Ag, Al and Au) to find memristive characteristics depending on the lithium content and electrode materials. Compared with undoped and 1%Li-doped ZnO devices, the 10 at.%Li-doped ZnO (10LiZnO) device exhibits resistive switching memory. The Ag/10LiZnO/Pt and Ag/10LiZnO/LaB₆ memory devices exhibit unipolar resistive switching behavior while bipolar resistive switching in Ag/10LiZnO/FTO, Au/10LiZnO/FTO and Al/10LiZnO/LaB₆ structures is revealed. The dominant conduction mechanisms are explained in terms of Ohmic behavior, space charge limited current (SCLC) and Schottky emission for the URS and BRS behaviors.

• Periodical: Advances in Science and Technology (Volume 99)
• Pages: 75-80
• DOI: https://doi.org/10.4028/www.scientific.net/AST.99.75
• Online since: October 2016
• Authors: Arsen Igityan*, Yevgenia Kafadaryan, Natella Aghamalyan, Silva Petrosyan
• Keywords: Bipolar Switching, Li-Doped ZnO, Memristor, Unipolar Switching

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