Toward Sub-20 nm Magnetic Tunnel Junction for Embedded Cache Memory

Toshihiro Sugii; Hideyuki Noshiro; Yuichi Yamazaki; Chikako Yoshida; Yoshihisa Iba

doi:10.4028/www.scientific.net/AST.99.90

Paper Titles

Sensitivity and Selectivity of SnO₂-Based Sensor for CO and H₂ Detections: A Novel Method to Detect Simultaneously the CO and H₂ Concentrations
p.40

Enhanced Gas Sensing Properties of Different ZnO 3D Hierarchical Structures
p.48

Green Synthesis of Biopolymer-Silver Nanocomposites for Gas Sensing
p.54

Sensing Properties of Diode-Type Gas Sensors
p.61

Potential Fluctuation in RRAM Based on Non-Stoichiometric Hafnium Sub-Oxides
p.69

The Resistive Switching Behavior of ZnO Films Depending on Li Dopant Concentration and Electrode Materials
p.75

Integrating MTJ Devices into a 130nm CMOS Process Flow
p.81

Toward Sub-20 nm Magnetic Tunnel Junction for Embedded Cache Memory
p.90

Memory Loss in a Tantalum Oxide Memristor
p.94

HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 99Toward Sub-20 nm Magnetic Tunnel Junction for...

Toward Sub-20 nm Magnetic Tunnel Junction for Embedded Cache Memory

Abstract:

In this paper, shrink process for small MTJs is investigated from the point of scalability. In the shrink process, various nitrogen or oxygen plasma treatments are done after the MTJ (CoFeB/MgO/CoFeB) etching. During this plasma treatment, the sidewall surface of the MTJ is modified, which results in the small electrical MTJ size of around 20 nm.Proposed techniques are scalable and promising for sub-20 nm MTJ generation in high density cache MRAM application.