Diffusion of Implanted 195Au Radiotracer Atoms in Amorphous Silicon under Irradiation with 1 Mev-N+ Ions

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Periodical:

Defect and Diffusion Forum (Volumes 194-199)

Edited by:

Y. Limoge and J.L. Bocquet

Pages:

659-666

DOI:

10.4028/www.scientific.net/DDF.194-199.659

Citation:

T. Voss et al., "Diffusion of Implanted 195Au Radiotracer Atoms in Amorphous Silicon under Irradiation with 1 Mev-N+ Ions", Defect and Diffusion Forum, Vols. 194-199, pp. 659-666, 2001

Online since:

April 2001

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