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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 206-207Structural and Electrical Study of 4H-SiC...

Structural and Electrical Study of 4H-SiC CVD-Grown Layer with Micropipe Dissociation

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Defects and Diffusion in Ceramics IV

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Periodical:

Defect and Diffusion Forum (Volumes 206-207)

Pages:

111-116

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.206-207.111

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Online since:

July 2002

Authors:

Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Kunikaza Izumi

Keywords:

4H-SiC, I-V Characteristic, Micropipe, Micropipe Dissociation, Screw Dislocations

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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