Solid-State Reactions in Ni(10 nm)/C(2 nm)/Si(001) Thin Film System

Yu.N. Makogon; O.P. Pavlova; G. Beddies; A.V. Mogilatenko; O.V. Chukhrai

doi:10.4028/www.scientific.net/DDF.264.155

Paper Titles

Nonlinear Stress Effects in Diffusion
p.117

Stress Relaxation Mechanisms during Cd₂₁Ni₅ Intermetallic Growth under High Hydrostatic Pressure
p.123

Thermal and Mechanical Stability of Polycrystalline Nanowires
p.133

On the Role of Stress, Strain and Diffusion in Dissolution – Condensation Mechanism of Liquid Metal Embrittlement
p.141

Diffusion of Implanted Metals in Tantalum Silicide
p.151

Solid-State Reactions in Ni(10 nm)/C(2 nm)/Si(001) Thin Film System
p.155

Influence of Annealing Environment and Film Thickness on the Phase Formation in the Ti/Si(100) and (Ti +Si)/Si(100) Thin Film Systems
p.159

Study of Diffusion and Reaction Diffusion in the Fe-C-Nb System
p.163

On the Local Equilibrium during Dissolution of a Thin Film
p.171

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 264Solid-State Reactions in Ni(10 nm)/C(2 nm)/Si(001)...

Solid-State Reactions in Ni(10 nm)/C(2 nm)/Si(001) Thin Film System

Abstract:

Annealing environment effect on the phase formation in Ni(10 nm)/C(2 nm)/Si(001) thin film system produced by sequential sputtering of C and Ni targets without vacuum breaking was under investigation. The specimens were annealed 30 s in vacuum of 1.3·10-4 Pa and in nitrogen flow in the temperature range of 450 - 1000°C. The temperature stimulated solid-state reactions that occur as the result of interdiffusion processes between layers of the thin film system under investigations were examined by X-ray - and electron diffractions, resistivity measurements and Rutherford backscattering. It was established that an annealing environment has a strong impact on the development of the solid-state reactions in Ni(10 nm)/C(2 nm)/Si(001) thin film system.