Paper Titles

Macroporous Silicon Electrochemical Etching for Gas Diffusion Layers Applications: Effect of Processing Temperature
p.887

Thermal Diffusivity of Traditional and Innovative Sheet Steels
p.893

Electroless Ni-P Composites with ZrO₂: Preparation, Characterization, Thermal Treatment
p.899

Improvement of the Electrochemical Properties in Nano-Sized Al₂O₃ and AlF₃-Coated LiFePO₄ Cathode Materials
p.906

Characterization of Electrolytically Deposited CdSe on Ti Substrates
p.912

The Effect of Al₂O₃ and Li₂O on the Anatase to Rutile Phase Transformation
p.918

Effect of the Separating Distance of Twin Buildings on the Generated Flow Structure
p.924

Pulse Electrolysis for the Production of Hard Ni/TiO₂-ZrO₂ Composite Coatings
p.930

Dispersion of Twin Inclined Fume Jets of Variable Temperature within a Crossflow
p.936

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 297-301Characterization of Electrolytically Deposited...

Characterization of Electrolytically Deposited CdSe on Ti Substrates

Article Preview

Abstract:

Electrolytical deposition of CdSe on Ti substrates from CdSO4 - SeO2 solutions is investigated. The effect of the bath temperature was investigated and how it affects the CdSe deposits. According to the XRD spectra, the obtained CdSe films exhibit the cubic zinc-blende structure that remains unaffected by vacuum heat treatment (650°C). The surface morphology of the films differs significantly with bath solution temperatures. When Au contacts are used, the Ti/CdSe/Au structure may exhibit rectifying properties depending on the temperature during the electrodeposition. High temperature baths make the deposits to obtain ohmic properties.

You might also be interested in these eBooks

Diffusion in Solids and Liquids V

Info:

Periodical:

Defect and Diffusion Forum (Volumes 297-301)

Pages:

912-917

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.297-301.912

Citation:

Cite this paper

Online since:

April 2010

Authors:

T.G. Argyropoulos, Jelica Novakovic, M.D. Athanassopoulou, P. Vassiliou, J.A. Mergos, C.T. Dervos

Keywords:

Annealing, Electro-Deposition, II-VI Semiconductor, Thin Film, Wurtzite CdSe

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2010 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] F. Cerdeira, I. Torriani, P. Motisuke, V. Lemos and F. Decker: Appl. Phys. A Vol. 46 (1988), p.107.

[2] G. Hodes, J. Manassen and D. Cahen: J. Am. Chem. Soc. Vol. 102(18) (1980), p.5962.

[3] C.M.T. Gutierrezand J. Ortega: J. Electrochem. Soc. Vol. 136 (1989), p.2316.

[4] D.J. Norris and Y.A. Vlasov: Adv. Mater. Vol. 13 (2001), p.371.

[5] K.R. Murali, V. Swaminathan and D.C. Trivedi: Solar Energy Mater. & Solar CellsVol. 81 (2004), p.113.

[6] D.L. Klein, R. Roth, K.L.A. Lim, A.P. Alivisatos, P.L. McEuen: Nature Vol. 389 (1997), p.699.

[7] A.C. Jones: Chem. Soc. Rev. Vol. 26 (1997), p.101.

[8] M. Fujii, T. Kawai and S. Kawai: Solar Energy Mater. Vol. 18 (1988), p.23.

[9] R.C. Kainthla, D.K. Pandya and K.L. Chopra: J. Electrochem. Soc. Vol. 127 (1980), p.277.

[10] D.R. Pratt, M.E. Langmuir, R.A. Boudreau and R.D. Rauh: J. Electrochem. Soc. Vol. 128 (1981), p.1627.

[11] K. Rajeshwar, L. Thompson, P. Single, R.C. Kainthla K.L. Chopra: J. Electrochem. Soc. Vol. 128 (1981), p.1744.

[12] R.A. Boudreau, R.D. Rauch: J. Electrochem. Soc. Vol. 130 (1983), p.513.

[13] G. Hodes, J. Mauassen, D. Cahen: Nature (London) Vol. 261 (1976), p.403.

[14] M.S. Kazacos, B. Miller: J. Electrochem. Soc. Vol. 127 (1981), p.2378.

[15] G. Hodes, A. Albu-Yaron, A. Decker, P. Motisuke: Phys. Rev. B Vol. 36 (1987), p.4215.

DOI: 10.1103/physrevb.36.4215

[16] D. Lincot: Thin Solid Films Vol. 487 (2005), p.40.

[17] S. Nagata and K. Agata: J. Phys. Soc. Jpn. Vol. 6 (1951), p.523.

[18] I.P. Kalinkin, L.A. Srgeeva, V.A. Aleskovskii and L.P. Strakhov: Krystallografiya Vol. 8 (1963), p.459.

[19] E.H. Rhoderick, Metal Semiconductor contacts, Oxford SP, (1980).

[20] K.R. Murali, I. Radhakrishna, K. Nagaraja Rao and V.K. Venkatesan: J. Mat. Sci. Vol. 25 (1990), p.3521.