Local Density Diffusivity (LDD-) Model for Boron Out-Diffusion of In Situ Boron-Doped Si_0.75Ge_0.25 Epitaxial Films Post Advanced Rapid Thermal Anneals with Carbon Co-Implant

Abstract:

Boron in silicon has presented challenges for decades because of clustering and so-called transient enhanced diffusion [1-2]. An understanding of boron diffusion post rapid thermal annealing in general, and out of in situ doped epitaxially grown silicon-germanium films in particular, is essential to hetero junction engineering in microelectronic device technology today. In order to model boron diffusion, post-implantation, the local density diffusion (LDD) model has been applied in the past [3]. Via mathematical convolution of the diffusion model slope and the initial boron concentration profile, these former results were transferred to this work. In this way, non-diffusing boron was predicted to exist in the center of the presented in situ boron-doped films. In addition, boron diffusion control by co-implanted carbon was demonstrated and the applied LDD model was completed and confirmed by adapting A. Einstein’s proof [4] for this purpose.

• Periodical: Defect and Diffusion Forum (Volume 307)
• Pages: 63-73
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.307.63
• Online since: December 2010
• Authors: Frank Wirbeleit
• Keywords: Boron, Diffusion, Germanium, Implant, Non-Gaussian Diffusion Model, SiGe, Silicon, Ultra Shallow Junction

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