Modification and Characterization of the Surface of SOI Nanowire Sensors

Abstract:

In the present study, the pursued purposes were: (i) monitoring the electrical properties of silicon-on-insulator nanowires (SOI NWs), (ii) determination of surface treatments suitable for obtaining reproducible states on the surface of SOI NWs after their long-term storage, and (iii) identification of surface treatments suitable for regenerating the NW surface after protein (bovine serum albumin molecules) detection. It is shown that, during storage, with the passage of time a negative effective charge was accumulated on the surface of n-SOI NWs up to surface density Q_eff = (2-4)х10¹² cm^-2, while the interface states at the NW/SiO₂ interface underwent relatively slow depassivation. Treatments in H₂O₂ with subsequent treatments in HF can be used for removing organic contaminations from the NW surface and for regenerating the initial working state of SOI NWs after protein detection.

• Periodical: Journal of Nano Research (Volumes 18-19)
• Pages: 139-147
• DOI: https://doi.org/10.4028/www.scientific.net/JNanoR.18-19.139
• Online since: July 2012
• Authors: O.V. Naumova, B.I. Fomin, N.F. Malyarenko, V.P. Popov
• Keywords: Nanowire, Protein, Silicon-on-Insulator (SOI), Surface Characterization, Surface Treatments

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