Effect of Annealing Atmosphere on the Structural and Optical Properties of ZnO Thin Films on Si (100) Substrates Grown by Atomic Layer Deposition

Abstract:

ZnO thin films were deposited on Si (100) substrates by atomic layer deposition. Annealing treatments for the as-deposited films were performed in nitrogen, oxygen, argon and air at 800 °C, respectively. The influence of annealing atmosphere on the structural and optical properties of the ALD-ZnO thin films was investigated by XRD, SEM, and PL. Results reveals that the films annealed in oxygen atmosphere exhibited excellent crystallinity (polycrystalline hexagonal wurtzite structure with a strong (002) preferred crystallographic planes), relatively smooth surface and better luminescence performance, which means that O2 is the most suitable annealing atmosphere for obtaining high quality ALD-ZnO thin films.

• Periodical: Journal of Nano Research (Volume 37)
• Pages: 92-98
• DOI: https://doi.org/10.4028/www.scientific.net/JNanoR.37.92
• Online since: December 2015
• Authors: J.L. Tian, Gui Gen Wang, Hua Yu Zhang
• Keywords: Annealing Atmosphere, Atomic Layer Deposition, Photoluminescence, X-Ray Diffraction, ZNO

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