Paper Titles
Chemical Vapor Deposited Graphene for Opto-Electronic Applications
p.57
Photoelectric Phenomena and Photoelectric Characterization Methods of the MOS System - Basics and New Developments
p.69
The Effect of Incorporation of Hydrocarbon Groups on Visible Photoluminescence of Thermally Treated Fumed Silica
p.80
Micro- and Nanotextured Silicon for Antireflective Coatings of Solar Cells
p.89
Optical and Electron-Beam Recording of Surface Relief’s Using Ge5As37S58–Se Nanomultilayers as Registering Media
p.96
Physical Insights on Charge Transport Mechanism and the LF Noise Behavior in Oxidized Si Structures with Ge Nanoclusters
p.105
Memristor Effect in Sandwich-Type Ni-TiOx-p/Si-Ni Heterojunction
p.114
High-k MNOS-Like Stacked Dielectrics for Non-Volatile Memory Application
p.121
Silicon Nanocrystalline Nonvolatile Memory - Characterization and Analysis
p.134

Optical and Electron-Beam Recording of Surface Relief’s Using Ge5As37S58–Se Nanomultilayers as Registering Media

Article Preview

Abstract:

Processes of e-beam and holographic recording of surface-relief structures using Ge5As37S58–Se multilayer nanostructures as registering media were studied in this paper. Optical properties of Ge5As37S58, Se layers and Ge5As37S58–Se multilayer nanostructures were investigated. Spectral dependencies of refractive index were analyzed within the frames of single-oscillator model. Values of optical band gaps for Ge5As37S58, Se layers and Ge5As37S58–Se multilayer nanostructures were obtained from Tauc dependencies. Holographic recording process depends on the polarization of the recording beams. Using e-beam and holographic recording diffraction gratings and other elements were recorded in Ge5As37S58–Se multilayer nanostructures.

You might also be interested in these eBooks
Journal of Nano Research Vol. 39 View Preview

Info:

Periodical:

Journal of Nano Research (Volume 39)

Pages:

96-104

DOI:

https://doi.org/10.4028/www.scientific.net/JNanoR.39.96

Citation:

Cite this paper

Online since:

February 2016

Authors:

Alexander Stronski*, Elena Achimova, Oleksandr Paiuk, Alexei Meshalkin, Vladimir Abashkin, Oksana Lytvyn, Sergei Sergeev, Alexander Prisacar, Pavel Oleksenko, Genadii Triduh

Keywords:

Amorphous Chalcogenide, E-Beam Recording, Holographic Recording, Multilayer Nanostructures

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2016 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] M. T. Kostishin, E. V. Mikhailovskaya, P. F. Romanenko, G. A. Sandul, About the photographic sensitivity of the thin semiconductor layers, Journal of Applied and Scientific Photography and Cinematography, 10 (1965) 450–451 (in Russian).

Google Scholar

[2] A.V. Stronski, M. Vlcek Photosensitive properties of chalcogenide vitreous semiconductors in diffractive and holographic technologies applications, Journal of Optoelectronics and Advanced Materials, 4, (2002), 699-704.

Google Scholar

[3] Y. Mizushima and A. Yoshikawa Photoprocessing and lithographic applications, in: Amorph. Semicond., Technologies & Devices, Tokyo e. a. Amsterdam, 1982, pp.277-295.

Google Scholar

[4] R. Klabes, A. Thomas, G. Kluge, W. Beyer, R. Grotzschet, and P. Suptitz Ion-beam induced silver doping in Ag2Se/GeSe – resist system, Phys. Stat. Sol. A106, (1988) 57-65.

DOI: 10.1002/pssa.2211060108

Google Scholar

[5] K. Saito, Y. Utsigi, and A. Yoshikawa X-ray lithography with Ag-Se/GeSe inorganic resist using synchrotron radiation, J. Appl. Phys, 63, (1988), 565-567.

DOI: 10.1063/1.340087

Google Scholar

[6] A. Stronski Production of metallic patterns with the help of highresolution inorganic resists In : «Microelectronic Interconnections and Assembly», NATO ASI Series, 3: High Technology, -Vol. 54, G. Harman@P. Mach, (Eds), Kluwer academic publishers, Netherlands, 1998, pp.263-293.

DOI: 10.1007/978-94-011-5135-1_31

Google Scholar

[7] A. Kikineshi, Light-stimulated structural transformations and optical recording in amorphous nano-layered structures, JOAM, 3 (2001) 377–382.

Google Scholar

[8] S. Kokenyesi, Amorphous chalcogenide nano-multilayers: research and development, ibid., 8, (2006) (2093).

Google Scholar

[9] A. Stronski, E. Achimova, A. Paiuk, V. Abaskin, A. Meshalkin, A. Prisacar, G. Triduh, O. Lytvyn Surface relief formation in Ge5As37S58–Se nanomultilayers J. Non-Cryst. Sol. 409 (2015) 43-48.

DOI: 10.1016/j.jnoncrysol.2014.11.010

Google Scholar

[10] R. Naik, K.V. Adarsh, R. Ganesan, K.S. Sangunni, S. Kokenyesi, U. Deshpande, T. Shripathi, X-ray photoelectron spectroscopic studies on Se/As2S3 and Sb/As2S3 nanomultilayered film, J. Non-Crystalline Solids 355 (2009) 1836–1839.

DOI: 10.1016/j.jnoncrysol.2009.05.064

Google Scholar

[11] V. Takats Photon and electron induced transformations and pattern formation in amorphous chalcogenide nanolayer PhD Thesis University of Debrecen, Debrecen, (2012).

Google Scholar

[12] I. Ivan, I.A. Szabo and S. Kokenyesi Nonlinear photodiffusion in amorphous chalcogenide multilayers, Defect and Diffusion Forum, 237-240 (2005), 1210-1215.

DOI: 10.4028/www.scientific.net/ddf.237-240.1210

Google Scholar

[13] A. Kikineshi, V. Palyok, I.A. Szabo, M. Shipljak, I. Ivan, D.I. Beke Surface deformation and amplitude –phase recording in chalcogenide nanolayered structures, J. Non-Cryst. Solids 326&327, (2003), 484-488.

DOI: 10.1016/s0022-3093(03)00457-5

Google Scholar

[14] A. Stronski, O. Paiuk, A. Gudymenko, V. Klad'ko, P. Oleksenko, N. Vuichyk, M. Vlček , I. Lischynskyy, E. ahderanta, A. Lashkul, A. Gubanova, Ts. Krys'kov Effect of doping by transitional elements on properties of chalcogenide glasses Ceramics International 41 (2015).

DOI: 10.1016/j.ceramint.2015.02.077

Google Scholar