Phosphorus-Doped p-Type ZnS Nanowires and their Photodetecting Applications Based on Device Construction

Abstract:

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Phosphorus-doped p-type ZnS NWs were synthesized by chemical deposition method. The as-synthesized NWs shows obvious p-type conduction with a hole concentration of 8.35 × 1017 cm-3. ZnS-Si core-shell nanoheterojunction was fabricated by depositing Si thin film on the surface of ZnS NWs through a sputtering method. The core-shell nanostructure exhibited excellent photoresponse to white light and UV light. Under UV light illumination, a high performance with a responsibility of ~ 0.14 × 103 AW-1, a gain of ~ 0.69 × 103 and a detectivity of ~ 1.2 × 1010 cmHz1/2W-1 were obtained based on the ZnS-Si core-shell nanoheterojunction. This new nanostructure is expected to play an important role in the next-generation optoelectronic devices.

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Periodical:

Pages:

65-72

DOI:

10.4028/www.scientific.net/JNanoR.42.65

Citation:

X. W. Zhang et al., "Phosphorus-Doped p-Type ZnS Nanowires and their Photodetecting Applications Based on Device Construction", Journal of Nano Research, Vol. 42, pp. 65-72, 2016

Online since:

July 2016

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$35.00

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