Investigation of Phosphorus In-Diffusion and Strain in GaAsP/GaAs Using High-Resolution Transmission Electron Microscopy

Abstract:

We report our experiments based on the interfaces of a 5-period superlattice, containing GaAsP(3Å)/GaAs (190Å) heterostructures grown by molecular beam epitaxy (MBE). The atomic arrangement at the interfaces of GaAsP/GaAs is investigated using high resolution transmission electron microscopy (HRTEM). Our results indicate that the superlattice was grown coherently with strained layers. We propose that the atomic arrangement at the interface is GaP, assuming that phosphorus incorporation occurs primarily via substitution due to desorption of arsenic at the surface for substrate temperatures above 500°C. The incorporation of phosphorus has been investigated using fast Fourier transform (FFT) patterns and shows a form of strain distribution near the heterointerface. The FFT patterns of the superlattice reveal that strain distributes mostly near the interface and gradually decreases along the direction of growth. Phosphorus diffused into a GaAs layer changes the lattice constant in the growth direction, which reduces strain in the superlattice.

• Periodical: Journal of Nano Research (Volume 62)
• Pages: 1-7
• DOI: https://doi.org/10.4028/www.scientific.net/JNanoR.62.1
• Online since: April 2020
• Authors: Wonjae Chang*
• Keywords: Fast Fourier Transform, Gallium Arsenide, High-Resolution Transmission Electron Microscopy, Molecular Beam Epitaxy, Superlattice

References

[1] M. Diaz, L. Wang, D. Li, X. Zhao, B. Conrad, A. Soeriyadi, A. Gerger, A. Lochtefeld, C. Ebert, R. Opila, I. Perez-Wurfl, A. Bernett, Tandem GaAsP/SiGe on Si solar cells, Sol. Energy Mater. Sol. Cells, 143 (2015) 113-119.

DOI: 10.1016/j.solmat.2015.06.033

[2] T. Takamoto, E. Ikeda, H. Kurita, Over 30% efficient InGaP/GaAs tandem solar cells, Appl. Phys. Lett. 70 (1997) 381-383.

DOI: 10.1063/1.118419

[3] T. Sato and M. Imai, Effects of nitrogen on GaAsP light-emitting diodes, J. Appl. Phys. 91 (2002) 6266-6272.

DOI: 10.1063/1.1469664

[4] F. Agahi, A. Baliga, K. M. Lau, N. G. Anderson, Tensile-strained barrier GaAsP/GaAs single quantum-well lasers, Appl. Phys. Lett. 68 (1996) 3778-3780.

DOI: 10.1063/1.116614

[5] T. D. Brown and G. S. May, Hybrid neural network modeling of anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy, IEEE Trans. Semiconductor Manufacturing, 18 (2005) 614-621.

DOI: 10.1109/tsm.2005.858506

[6] A. V. Boitsov, N. A. Bert, Yu. G. Musikhin, V. V. Chaldyshev, M. A. Yagovkina, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature, Semiconductors, 40 (2006) 758-762.

DOI: 10.1134/s1063782606070025

[7] R. F. Scholz and U. Gosele, Phosphorus and antimony in GaAs as tracers for self-diffusion on the arsenic sublattice, J.Appl.Phys. 87 (2000) 704-710.

DOI: 10.1063/1.371929

[8] T. Soga, J. Inoue, T. Jimbo, M. Umeno, OBSERVATION OF LATTICE-RELAXATION AT THE GAASP/GAAS INTERFACE BEYOND THE CRITICAL THICKNESS BY TRANSMISSION ELECTRON-MICROSCOPY, J. Appl. Phys. 75 (1994) 4510-4514.

DOI: 10.1063/1.355942

[9] X. Liu, A. Prasad, J. Nishio, E. R. Weber, Z. Liliental-Weber, W. Walukiewicz, NATIVE POINT-DEFECTS IN LOW-TEMPERATURE-GROWN GAAS, Appl. Phys. Lett. 67 (1995) 279-281.

DOI: 10.1063/1.114782

[10] E.R. Weber, H. Ennen, U. Kaufmann, J. Windscheif, J.Schneider, T. Wosinski, IDENTIFICATION OF ASGA ANTISITES IN PLASTICALLY DEFORMED GAAS, J. Appl. Phys. 53 (1982) 6140-6143.

DOI: 10.1063/1.331577

[11] M. Losurdo, P. Capezzuto, G. Bruno, A. S. Brown, T. Brown, G. May, Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry of As-for-Sb and Sb-for-As exchange reactions, J. Appl. Phys. 100 (2006) 013531.

DOI: 10.1063/1.2216049

[12] J.C. Bean, L.C. Feldman, A.T. Fiory, S. Nakahara, I.K. Robinson, GEXSI1-X/SI STRAINED- LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY, J. Vac. Sci. Technol. A, 2 (1984) 436-440.

DOI: 10.1116/1.572361

[13] D. Shindo, Y. Ikematsh, S. H. Lim, I. Yonenaga, Digital electron microscopy on advanced materials, Materials Characterization, 44 (2000) 375-384.

DOI: 10.1016/s1044-5803(00)00073-5

[14] A. Vila, A. Cornet, J. R. Morante, P. Ruterana, R. Bonnet, Structure of 60 degrees dislocations at the GaAs/Si interface, J. Appl. Phys. 79 (1996) 676-681.

DOI: 10.1063/1.360812

[15] Y. Q. Wang, Z. L. Wang, T. Brown, A. Brown, G. May, Configurations of misfit dislocations at interfaces of lattice-matched Ga0.5In0.5P/GaAs heterostructures, Appl. Phys. Lett. 77 (2000) 223-225.

DOI: 10.1063/1.126931

[16] B. C. DE Cooman and C.B. Carter, THE FORMATION OF FAULTED DIPOLES IN PLASTICALLY DEFORMED GAAS, Phys. Status Solidi A, 112 (1989) 41-54.

DOI: 10.1002/pssa.2211120105

[17] B.C. De Cooman and C.B. Carter, FAULTED DIPOLES IN GAAS, Appl. Phys. Lett. 50 (1987) 40-42.

DOI: 10.1063/1.98120

[18] M. Sennour, S. Lartigue-Korinek, Y. Champion, M.J. Hytch, Local strain analysis in twin boundaries in ultrafine grained copper, J. Mater. Sci. 43 (2008) 3806–3811.

DOI: 10.1007/s10853-007-2303-5

[19] A. Ourmazd, D. W. Taylor, M. Bode, Y. Kim, Quantifying the Information- Content of Lattice Images, Science 246 (1989) 1571-1577.

DOI: 10.1126/science.246.4937.1571

[20] C. Kisielowski, P. Schwander, F. H. Baumann, M. Seibt, Y. Kim, A. Ourmazd, AN APPROACH TO QUANTITATIVE HIGH-RESOLUTION TRANSMISSION ELECTRON- MICROSCOPY OF CRYSTALLINE MATERIALS, Ultramicroscopy 58 (1995) 131-155.

DOI: 10.1016/0304-3991(94)00202-x

[21] A. Rosenauer, T. Remmele, D. Gerthsen, K. Tillmann, A. Forster, Atomic scale strain measurements by the digital analysis of transmission electron microscopic lattice images, Optik 105 (1997) 99-107.

[22] A. Rosenauer, U. Fischer, D. Gerthsen, F. Forster, Composition evaluation of InxGa1-xAs Stranski-Krastanow-island structures by strain state analysis, Appl. Phys. Lett. 71 (1997) 3868-3870.

DOI: 10.1063/1.120528

[23] M. D. Robertson, J. E. Currie, J. M. Corbett, J. B. Webb, DETERMINATION OF ELASTIC STRAINS IN EPITAXIAL LAYERS BY HREM, Ultramicroscopy, 58 (1995) 175-184.

DOI: 10.1016/0304-3991(94)00200-7

[24] Electron Microscopy Software, Jems – java version, Copyright © P. Stadelmann 1999-2003, CIME-EPFL Switzerland.

[25] H. Aoyagi, H. Horinaka, Y. Kamiya, T. Kato, T. Kosugoh, S. Nakamura, T. Nakanishi, S. Okumi, T. Saka, M. Tawada, M. Tsubata, STRAIN DEPENDENCE OF SPIN POLARIZATION OF PHOTOELECTRONS FROM A THIN GAAS LAYER, Phys. Lett. A, 167 (1992) 415-420.

DOI: 10.1016/0375-9601(92)90283-r

[26] P. Specht, R. C. Lutz, R. Zhao, E. R. Weber, W.K. Liu, K. Bacher, F. J. Towner, T. R. Stewart, M. Luysberg, Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C, J. Vac. Sci. Technol. B 17 (1999) 1200-1204.

DOI: 10.1116/1.590747

[27] X. Xu, S. P. Beckman, P. Specht, E. R. Weber, D. C. Chrzan, R. P. Erni, I. Arslan, N. Browning, A. Bleloch, C. Kisielowski, Distortion and segregation in a dislocation core region at atomic resolution, Phys. Rev. Lett. 95 (2005) 145501.

DOI: 10.1103/physrevlett.95.145501

[28] Image Processing and Analysis in Java, http://rsbweb.nih.gov/ij/ (Last accessed Oct. 2018).

[29] Delores M. Etter and David C. Kuncicky, Introduction to Matlab 7, Pearson Prentice Hall, New Jersey, 2005, p.234.