SiC in Space: Potential High-Power Application Survey

Abstract:

The next space missions require power levels that current space qualified semiconductor technology cannot provide. The silicon carbide devices are considered to overcome these challenges, and provide the required technical performance. European space industry is asked in individual meetings about their specific needs and requirements, this information is gathered, classified and presented to the silicon carbide manufacturers. This work is the connection between the two industries to better understand the requirements and applications, and build a new business case for the SiC devices in space applications.

• Periodical: Key Engineering Materials (Volume 1024)
• Pages: 97-106
• DOI: https://doi.org/10.4028/p-4i8vgQ
• Online since: September 2025
• Authors: Antxon Arrizabalaga*
• Keywords: Business Case, High Power, Industry, Power Electronics, Semiconductor, SiC, Space Electronics, Space Power

References

[1] Nasa, "NASA's lunar exploration program overview," 2020.

[2] European Space Agency (ESA), "ESA lunar exploration journey." Accessed: May 14, 2024. [Online]. Available: https://lunarexploration.esa.int/intro

[3] European Space Agency (ESA-ESTEC) Requirements & Standards Division, "ECSS-Q-ST-30-11C-Rev.2," 2021.

[4] J. W. Kolar and G. I. Ortiz, "Solid state transformer concepts in traction and smart grid applications." [Online]. Available: www.pes.ee.ethz.ch

[5] X. She, A. Q. Huang, and R. Burgos, "Review of solid-state transformer technologies and their application in power distribution systems," IEEE J Emerg Sel Top Power Electron, vol. 1, no. 3, p.186–198, Sep. 2013.

DOI: 10.1109/JESTPE.2013.2277917

[6] A. Rujas, V. M. Lopez, I. Villar, T. Nieva, and I. Larzabal, "SiC-hybrid based railway inverter for metro application with 3.3kV low inductance power modules," in IEEE Energy Conversion Congress & Expo (ECCE), 2019.

DOI: 10.1109/ecce.2019.8912684

[7] J. Zhu, H. Kim, H. Chen, R. Erickson, and D. Maksimovic, "High efficiency SiC traction inverter for electric vehicle applications," in IEEE Applied Power Electronics Conference and Exposition (APEC), IEEE, 2018.

DOI: 10.1109/apec.2018.8341204

[8] A. Matallana et al., "Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects," Renewable and Sustainable Energy Reviews, vol. 113, p.109264, Oct. 2019.

DOI: 10.1016/J.RSER.2019.109264

[9] W. Perdikakis, M. J. Scott, K. J. Yost, C. Kitzmiller, B. Hall, and K. A. Sheets, "Comparison of Si and SiC EMI and efficiency in a two-level aerospace motor drive application," IEEE Transactions on Transportation Electrification, vol. 6, no. 4, p.1401–1411, Dec. 2020.

DOI: 10.1109/TTE.2020.3010499

[10] U. Nasir et al., "A SiC based 2-Level power converter for shape-and-space-restricted aerospace applications," in IEEE 13th International Conference on Power Electronics and Drive Systems (PEDS)., 2019.

DOI: 10.1109/peds44367.2019.8998907

[11] K. E. Bozak, L. R. Piñero, R. J. Scheidegger, M. V Aulisio, M. C. Gonzalez, and A. G. Birchenough, "High input voltage, silicon carbide power processing unit performance demonstration," in AIAA Propulsion & Energy Conference, 2015. [Online]. Available: https://ntrs.nasa.gov/search.jsp?R=20150023096

DOI: 10.2514/6.2015-3900

[12] R. J. Scheidegger, W. Santiago, K. E. Bozak, L. R. Piñero, and A. G. Birchenough, "High power silicon carbide (SiC) power processing unit development," 2015. [Online]. Available: https://ntrs.nasa.gov/search.jsp?R=20150023084

DOI: 10.1149/06911.0013ecst

[13] A. Lopez, P. F. Miaja, M. Arias, and A. Fernandez, "Circuit Proposal of a Latching Current Limiter for Space Applications Based on a SiC N-MOSFET," IEEE J Emerg Sel Top Power Electron, vol. 10, no. 5, p.5474–5485, Oct. 2022.

DOI: 10.1109/JESTPE.2022.3163585

[14] D. Marroquí et al., "Towards higher current and voltage LCLs," in 13th European Space Power Conference (ESPC) , 2023.

DOI: 10.1109/espc59009.2023.10298130

[15] A. F. Witulski et al., "Single-event burnout mechanisms in SiC power MOSFETs," IEEE Trans Nucl Sci, vol. 65, no. 8, p.1951–1955, Aug. 2018.

DOI: 10.1109/TNS.2018.2849405

[16] R. A. Johnson et al., "Unifying concepts for ion-induced leakage current degradation in silicon carbide Schottky power diodes," IEEE Trans Nucl Sci, vol. 67, no. 1, p.135–139, Jan. 2020.

DOI: 10.1109/TNS.2019.2947866

[17] A. Witulski et al., "Single-event effects in silicon carbide high voltage power devices for lunar exploration," 2023.

[18] A. Witulski et al., "Single-Event Effects in Silicon Carbide High Voltage Power Devices for Lunar Exploration," in Annual NASA Electronic Parts and Packaging (NEPP), 2023.

[19] C. Martinella et al., "Heavy-ion induced single event effects and latent damages in SiC power MOSFETs," Microelectronics Reliability, vol. 128, Jan. 2022.

DOI: 10.1016/j.microrel.2021.114423

[20] A. Sengupta et al., "Development of SEB-immune high voltage SiC power devices for lunar applications," in Annual NASA Electronic Parts and Packaging (NEPP), 2022.

[21] L. M. Tolbert, "Increasing switching performance of 10 kV SiC MOSFETs for medium voltage applications," in Swiss Chapter of IEEE PELS Webinar, 2022.

[22] V. Pala et al., "10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems," in IEEE Energy Conversion Congress and Exposition (ECCE) , 2014.

DOI: 10.1109/ecce.2014.6953428