Dynamic Characterization and Robustness of SiС MOSFETs Based on SmartSiCTM Engineered Substrates

Mohamed Alaluss; Christoph Böhm; Madhu Lakshman Mysore; Patrick Heimler; Thomas Basler; Ahmed Elsayed; Karl Oberdieck; Sudhanshu Goel

doi:10.4028/p-k87Vmx

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 1024Dynamic Characterization and Robustness of SiС...

Dynamic Characterization and Robustness of SiС MOSFETs Based on SmartSiC^TM Engineered Substrates

Abstract:

The improvement of the electrical properties of power semiconductors using engineered substrates is becoming increasingly significant. This paper investigates the dynamic performance and robustness of SiC MOSFETs based on SmartSiC^TM engineered substrates, focusing on the reverse recovery of the body diode and their ruggedness under overload conditions such as short-circuit and surge current. A comparison with SiC MOSFETs based on conventional monocrystalline substrates was performed to evaluate the results. A significant decrease in reverse recovery charge was observed, particularly at higher temperatures, while the robustness during short-circuit type I and surge current was not affected.

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Periodical:

Key Engineering Materials (Volume 1024)

Pages:

49-56

DOI:

https://doi.org/10.4028/p-k87Vmx

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Online since:

September 2025

Authors:

Mohamed Alaluss*, Christoph Böhm, Madhu Lakshman Mysore, Patrick Heimler, Thomas Basler, Ahmed Elsayed, Karl Oberdieck, Sudhanshu Goel

Keywords:

Body Diode, Reverse Recovery, Short Circuit, SiC Engineered Substrate, SiC MOSFET, SmartSiC, Surge Current, TCAD

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Creative Commons CC BY 4.0

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* - Corresponding Author

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