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Investigation on the Resistance Degradation of Trench SiC MOSFETs under Total Ionizing Dose Irradiation and High Drain Voltage Bias

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Abstract:

In this paper, the resistance degradation behaviors of double trench (DT) and asymmetric trench (AT) SiC MOSFETs under total ionizing dose (TID) effect and high drain voltage bias are investigated in detail. The output characteristics measurement results before and after irradiation indicate that the TID effect with high drain voltage bias increases the drain current, resulting in the On-state resistance degradation, whereas the high drain voltage bias seems to have no impact on the degradation. In particular, the DT SiC MOSFETs demonstrate a greater degree of degradation in comparison to the AT SiC MOSFETs under the same gate voltage. This phenomenon can be attributed to a more pronounced decline in channel resistance. Simultaneously, the threshold voltage (VTH), the drain leakage current (IDSS), and the gate leakage current (IGSS) are also measured, which can be concluded that the resistance degradation is attributable to the VTH negative shifting induced by the positive charge accumulation in the gate oxide. Furthermore, the AT SiC MOSFETs have better irradiation tolerance owing to the P-shield asymmetric trench structure, exhibiting slight shift in the VTH, the IDSS, and the IGSS. Finally, the TCAD simulations are utilized to successfully verify the degradation mechanism.

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Periodical:

Key Engineering Materials (Volume 1056)

Pages:

61-69

DOI:

https://doi.org/10.4028/p-utjOw2

Citation:

Cite this paper

Online since:

May 2026

Authors:

Zhao Xu Song, Yu Tian, Zhe Yuan Zhang, Su Yu Xu, Xian Grui Fan, Yi Ren Yu, Jia Xing Wei*, Si Yang Liu, Wei Feng Sun

Keywords:

High Drain Voltage Bias, Positive Charges Accumulation, Resistance Degradation, Total Ionizing Dose (TID) Effect, Trench SiC MOSFETs

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

[1] L. Kong, S. Chen, N. Ren, M. Ji, Y. Li, H. Yan, Z. Liu, H. Xu, J. Cheng, X. Lin, X. Zhong, W. Chen, H. Huang, Y. Zhang and K. Sheng, "High-Performance 10-kV-Rated, 175-mΩ 4H-SiC MOSFETs With MeV JFET Implantation and Efficient Termination," in IEEE Transactions on Electron Devices, vol. 72, no. 8, pp.4246-4253, Aug. 2025.

DOI: 10.1109/ted.2025.3574110

Google Scholar

[2] S. Kim, Y. Park, D. Lee, J. Choi, M. Seo, B. Kwak, M. Kim and K. W. Ma, "Performance Evaluation of Sic Mosfet-Based Inverter for Individual Blade Control in Electrical Aircraft," 2025 IEEE/AIAA Transportation Electrification Conference and Electric Aircraft Technologies Symposium (ITEC+EATS), Anaheim, CA, USA, 2025, pp.1-5.

DOI: 10.1109/ITEC63604.2025.11098042

Google Scholar

[3] R. Luo, Y. Duan, T. Luo, Y. Chang, W. Shi, X. Xu, J. Zhuang, G. Zhang and J. Fan, "Degradation Mechanism Analysis and Modeling of SiC MOSFETs Under 60Co Gamma Ray Total Ionizing Dose Irradiation," in IEEE Transactions on Electron Devices, vol. 72, no. 7, pp.3437-3444, July 2025.

DOI: 10.1109/ted.2025.3566690

Google Scholar

[4] C. Martinella et al., "Displacement Damage and Total Ionizing Dose Induced by 3-MeV Protons in SiC Vertical Power MOSFETs," in IEEE Transactions on Nuclear Science, vol. 72, no. 4, pp.1259-1267, April 2025.

DOI: 10.1109/tns.2024.3505058

Google Scholar

[5] H. G. de Medeiros, C. Martinella, M. Belanche, N. Für, P. Kumar, M. I. M. Martins, M. Nagel, S. Peracchi, R. Drury, Z. Pastuovic and U. Grossner, "Exploring the Relation Between SEEs Caused by Heavy-Ion Irradiation and Defects in SiC Devices," in IEEE Transactions on Nuclear Science, vol. 72, no. 8, pp.2443-2451, Aug. 2025.

DOI: 10.1109/tns.2025.3576491

Google Scholar

[6] J. Hu, X. Deng, Y. Wang, T. Xu, X. Li and B. Zhang, "An In-Depth Investigation of Gate Ringing Induced by Total Ionizing Dose in SiC MOSFETs," 2025 37th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Kumamoto, Japan, 2025, pp.577-580.

DOI: 10.23919/ispsd62843.2025.11117450

Google Scholar

[7] T. Liu, R. Ma, Z. Wang, Q. Liu, H. Wang, J. Shen, J. Luo and S. Hu, "Comparative Investigation on TID-Induced Threshold Voltage Shift for 1200V Asymmetric Trench SiC MOSFET by Experiment and Simulation," 2025 6th International Conference on Radiation Effects of Electronic Devices (ICREED), Yangzhou, China, 2025, pp.1-4.

DOI: 10.1109/icreed65908.2025.11036221

Google Scholar

[8] S. Liang, L. Shu, J. Wang, G. Deng and L. Wang, "Dynamic Degradation of Planar-Gate SiC MOSFETs After Total Ionizing Dose Radiation," in IEEE Transactions on Electron Devices, vol. 71, no. 7, pp.4079-4086, July 2024.

DOI: 10.1109/ted.2024.3398598

Google Scholar

[9] C. Peng, Z. Lei, Z. Zhang, Y. He, T. Ma and Y. Chen, "Bias and Temperature Dependence of Radiation-Induced Degradation for SiC MOSFETs," in IEEE Transactions on Nuclear Science, vol. 71, no. 5, pp.1186-1193, May 2024.

DOI: 10.1109/tns.2024.3384767

Google Scholar

[10] H. Feng, X. Liang, X. Pu, S. Yang, J. Feng, Y. Wei, Y. Xiang, J. Sun, D. Zhang, Y. Li, Q. Yu, X. Yu and Q. Guo, "Special Degradation Effects of 60Co γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs," in IEEE Transactions on Nuclear Science, vol. 70, no. 9, pp.2165-2174, Sept. 2023.

DOI: 10.1109/tns.2023.3298063

Google Scholar

[11] A. Agarwal and B. J. Baliga, "Performance Enhancement of 2.3 kV 4H-SiC Planar-Gate MOSFETs Using Reduced Gate Oxide Thickness," in IEEE Transactions on Electron Devices, vol. 68, no. 10, pp.5029-5033, Oct. 2021.

DOI: 10.1109/ted.2021.3102473

Google Scholar

[12] Z. Dong, Y. Bai, C. Yang, C. Li, Y. Tang, J. Hao, X. Tian and X. Liu, "Impact of Post-Trench Process Treatment on Electron Scattering Mechanisms in 4H-SiC Trench MOSFETs," in IEEE Transactions on Electron Devices, vol. 70, no. 4, pp.1782-1788, April 2023.

DOI: 10.1109/ted.2023.3247998

Google Scholar

[13] Z. Fu, Z. Shen, X. Tang, Y. Huang, J. Xu, K. Huang, Q. Zhang, Y. Chen, C. Xiao, K. Huang, S. Yue, Z. Wang and F. Zhang, "Comparative Study of TID Irradiation Effect on SiC Planar and Trench MOSFET," 2024 21st China International Forum on Solid State Lighting & 2024 10th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), Suzhou, China, 2024, pp.123-129.

DOI: 10.1109/sslchinaifws64644.2024.10835259

Google Scholar

[14] R. Luo, Y. Duan, B. Sun, J. Q. Zhang, J. Fan and P. Liu, "Total Ionizing Effects on Static Characteristics of 1200V SiC MOSFET Power Devices with Planar and Trench Structures," 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), Xiamen, China, 2023, pp.88-91.

DOI: 10.1109/SSLChinaIFWS60785.2023.10399707

Google Scholar