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In Situ Measurement of the Gain Stage of a SiC JFET Operational Amplifier under Gamma Ray Irradiation

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Abstract:

In this study, we conducted in-situ measurements on a SiC JFET operational amplifier operating under gamma-ray irradiation. It shows that the radiation did not affect the output waveform or voltage gain, but shifted the output offset voltage. This shift may result mainly from holes generated by irradiation and trapped in the oxide layer, which modified the I-V characteristics of the level-shifting diodes. It can be compensated by applying bias voltage, and it may also be prevented by optimizing the diode structure and/or circuit topology.

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Periodical:

Key Engineering Materials (Volume 1056)

Pages:

79-83

DOI:

https://doi.org/10.4028/p-pv3S4F

Citation:

Cite this paper

Online since:

May 2026

Authors:

Masayuki Yamamoto*, Takanori Amamiya, Akinori Takeyama, Ryuya Hirose, Mikihiro Yuzuriha, Koji Nakayama, Hitoshi Umezawa, Takeharu Kuroiwa, Takahide Sato, Takahiro Makino, Takeshi Ohshima, Shin Ichiro Kuroki, Yasunori Tanaka

Keywords:

Gamma Ray, Harsh Environment, Integrated Circuit, JFET, Operational Amplifier, Silicon Carbide (SiC), Wide Bandgap Semiconductors

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Creative Commons CC BY 4.0

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* - Corresponding Author

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