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HomeKey Engineering MaterialsKey Engineering Materials Vol. 1056Channel Length Effects on Threshold Voltage...

Channel Length Effects on Threshold Voltage Instability in Gamma Irradiated 4H-SiC PMOSFETs

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Abstract:

Silicon carbide (SiC) complementary metal-oxide-semiconductor (CMOS) technology and its circuit applications have been rapidly advancing, making the stability and reliability of planar p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) increasingly important. In this study, a channel-length-dependent threshold voltage instability was observed under both gate bias stress and gamma-ray irradiation. The results indicate that the majority of positive charge trapping originates from hole injection induced by external bias. Secondary ion mass spectrometry (SIMS) analysis confirmed the retention of aluminum species in the gate dielectric after thermal oxidation. Based on these experimental findings, a dopant diffusion model was proposed, suggesting that dopant contamination in the gate oxide is the primary cause of the channel-length-dependent instability.

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Periodical:

Key Engineering Materials (Volume 1056)

Pages:

47-53

DOI:

https://doi.org/10.4028/p-P6rBld

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Online since:

May 2026

Authors:

Chuan Han Chen*, Cheng Shu Chang, I Chen Tsai, Der Sheng Chao, Bing Yue Tsui

Keywords:

Gamma-Ray, Irradiation, Oxide Charge, pMOSFET, Threshold Voltage

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