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High-Bandwidth Measurement of Laser-Induced Transient Responses in SiC Devices for Understanding Single Event Burnout Phenomena

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Abstract:

A laser-based experimental system was developed to investigate Single Event Burnout (SEB) in high-voltage silicon carbide (SiC) devices. By enabling transient measurements under high reverse-bias conditions, the setup emulates ion-induced charge generation with femtosecond laser pulses. Time-resolved waveforms and charge collection trends were obtained, showing consistency with previous heavy ion experiments. This confirms the system’s capability to reproduce SEB-relevant dynamics. Further improvements in spatial resolution and impedance matching are required for detailed analysis of internal charge transport mechanisms.

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Periodical:

Key Engineering Materials (Volume 1056)

Pages:

55-60

DOI:

https://doi.org/10.4028/p-Y7deEt

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Cite this paper

Online since:

May 2026

Authors:

Takahiro Makino*, Tomoki Taoka, Kaito Yamamura, Takuro Tomita

Keywords:

High-Voltage Device Testing, Laser-Induced Transient Response, Silicon Carbide (SiC), Single Event Burnout (SEB), Two-Photon Absorption

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Creative Commons CC BY 4.0

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* - Corresponding Author

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