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1200V Lateral SiC Schottky Diode Radiation Hardness Enhancement

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Abstract:

Radiation-hardened SiC power devices are essential to prevent leakage degradation and catastrophic failures such as SEE and SEB. Lateral device structures lower the risk of contact shorting by providing greater physical separation between conductive regions. Wider device geometries also improve radiation tolerance, as larger dimensions can accommodate charge buildup with less effect on device performance. In addition, RESURF structures enhance robustness by shifting the high electric field into the bulk, which reduces the impact of radiation-sensitive interface states on breakdown.

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Periodical:

Key Engineering Materials (Volume 1056)

Pages:

85-92

DOI:

https://doi.org/10.4028/p-1f9tO3

Citation:

Cite this paper

Online since:

May 2026

Authors:

Zhao Xue Yuan*, Virendra Kotagama, Bai Ling Zhou, Peter Gammon, Marina Antoniou

Keywords:

Lateral Device, Radiation Hardness, RESURF Device, Schottky Diode, Silicon Carbide (SiC), Single Event Burnout (SEB), Single Event Effect

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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