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A Simulation Study of Electronic Device Designs for the Control of SiC Color Centers as Spin Qubits
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Experimental Investigation of Single-Event Effect Mechanisms in 1200V SiC VDMOSFETs under Heavy-Ion Irradiation
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Channel Length Effects on Threshold Voltage Instability in Gamma Irradiated 4H-SiC PMOSFETs
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High-Bandwidth Measurement of Laser-Induced Transient Responses in SiC Devices for Understanding Single Event Burnout Phenomena
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Experimental Investigation of Single-Event Effect Mechanisms in 1200V SiC VDMOSFETs under Heavy-Ion Irradiation

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Abstract:

The deployment of silicon carbide (SiC) power devices in aerospace applications is constrained by their unexpected susceptibility to single-event effects (SEEs), despite the inherent advantages of wide bandgap materials. In this work, we experimentally investigate the SEE mechanisms in in-house fabricated 1200 V SiC VDMOSFETs under heavy-ion irradiation using Ta ions with a LET of 75 MeV·cm²/mg. Real-time current monitoring, post-irradiation electrical characterization, and focused ion beam (FIB) analysis were employed to systematically examine device degradation and failure modes under various bias conditions. The results demonstrate a clear progression of damage with increasing bias voltage: no significant changes, single-event gate leakage degradation (SEGLD) at 100 V, single-event leakage current (SELC) in both Id=Ig and Id>Ig modes at 300–400 V, and catastrophic single-event burnout (SEB) at 500 V. Structural analyses reveal progressive deepening of gate oxide fractures, extension into the P+ source region, and eventual source metal melting, consistent with the observed electrical degradation. Notably, the threshold voltage remained stable throughout, suggesting that localized damage to limited unit cells has minimal influence on the global device threshold. These findings provide critical insights into SEE-induced degradation pathways in SiC MOSFETs and offer valuable guidelines for the design and radiation hardening of next-generation aerospace power systems.

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Periodical:

Key Engineering Materials (Volume 1056)

Pages:

41-45

DOI:

https://doi.org/10.4028/p-SCR8gg

Citation:

Cite this paper

Online since:

May 2026

Authors:

Zhi Wen Zhang*, Hao Yuan, Xiao Yan Tang, Qing Wen Song

Keywords:

Experimental Results, Focused Ion Beam, Heavy-Ion Irradiation, Post-Irradiation Electrical Characterization, Silicon Carbide (SiC), Single-Event Effect

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Creative Commons CC BY 4.0

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* - Corresponding Author

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