Ultra Precision Polishing with Oscillation Speed Control: an Analysis of the Pressure Distribution and Profile

Abstract:

Article Preview

Info:

Periodical:

Key Engineering Materials (Volumes 238-239)

Edited by:

Yongsheng Gao, Jun'ichi Tamaki and Koichi Kitajima

Pages:

219-222

Citation:

K. Yoshitomi et al., "Ultra Precision Polishing with Oscillation Speed Control: an Analysis of the Pressure Distribution and Profile", Key Engineering Materials, Vols. 238-239, pp. 219-222, 2003

Online since:

April 2003

Export:

Price:

$38.00

[1] A. Une, Y. Kai, M. Mochida, S. Matsui and F. Ohhira, Influence of Wafer Chucking on Focus Margin for Resolving Fine Patterns in Optical Lithography, Microelectronic Engineering, 2000, 53: 137-140.

DOI: https://doi.org/10.1016/s0167-9317(00)00281-1

[2] P. Wrschka, J. Hernandez, G.S. Oehrlein and J. King, Chemical Mechanical Planarization of Copper Damascene Structures, J. Electrochem. Soc., 2000, 147(2): 706-712.

DOI: https://doi.org/10.1149/1.1393256

[3] K. Yoshitomi, A. Une, M. Mochida, Highry Efficient CMP Planarization Using A Ring Polisher with Oscillation Seed Control, Proc. of the ISAAT2001, 2001: 259-262. Fig. 8. Wafer profile polished with uniform oscillation speed Fig. 9. Wafer profile polished with optimum oscillation speed Rotation : Wafer 75 rpm, Polisher -150 rpm Pressure : 10 kPa , Polishing time : 10 min Oscillation range : 70 - 120 mm Rotation : Wafer 100 rpm, Polisher -130 rpm Pressure : 20 kPa , Polishing time : 19 min Oscillation range : 5 - 120 mm.

DOI: https://doi.org/10.4028/www.scientific.net/kem.238-239.219

0.

5.

[1] 0.

[1] 5.

[2] 0-150 -100 -50 0 50 100 150 Wafer radius position mm Wafer profile �m . Before polishing Simulation After polishing.

0.

5.

[1] 0.

[1] 5.

[2] 0-150 -100 -50 0 50 100 150 Wafer radius position mm Wafer profile µm . Before polishing Simulation After polishing.

Fetching data from Crossref.
This may take some time to load.