Ultra Precision Polishing with Oscillation Speed Control: an Analysis of the Pressure Distribution and Profile

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[3] K.Yoshitomi, A. Une, M. Mochida, Highry Efficient CMP Planarization Using A Ring Polisher with Oscillation Seed Control, Proc. of the ISAAT2001, 2001: 259-262. Fig. 8. Wafer profile polished with uniform oscillation speed Fig. 9. Wafer profile polished with optimum oscillation speed Rotation : Wafer 75 rpm, Polisher -150 rpm Pressure : 10 kPa , Polishing time : 10 min Oscillation range : 70 - 120 mm Rotation : Wafer 100 rpm, Polisher -130 rpm Pressure : 20 kPa , Polishing time : 19 min Oscillation range : 5 - 120 mm 0.0 0.5 1.0 1.5 2.0-150 -100 -50 0 50 100 150 Wafer radius position mm Wafer profile �m . Before polishing Simulation After polishing 0.0 0.5 1.0 1.5 2.0-150 -100 -50 0 50 100 150 Wafer radius position mm Wafer profile µm . Before polishing Simulation After polishing

DOI: 10.3901/jme.2014.05.182

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