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HomeKey Engineering MaterialsKey Engineering Materials Vols. 238-239Physical and Chemical Characteristics of the...

Physical and Chemical Characteristics of the Ceramic Conditioner in Chemical Mechanical Planarization

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Advances in Abrasive Technology V

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Periodical:

Key Engineering Materials (Volumes 238-239)

Pages:

223-228

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.238-239.223

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Online since:

April 2003

Authors:

Jum Yong Park, Dae Hong Eom, Sang Ho Lee, Beom-Young Myung, Sang Ick Lee, Jin Goo Park

Keywords:

Ceramic Grooving, Chemical-Mechanical Planarization (CMP), Conditioning Disk, Diamond CVD Technology, Pad Conditioning

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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[1] S. H. Li and R. O. Miller ; Chemical Mechanical Polishing in Silicon Processing (Academic Press, San Diego 2000). -10 0 10 20 30 40 50 60 70 80 0 500 1000 1500 2000 2500 Number of Defects (ea) Polish Time (Hour) Ceramic conditioning disk Conventional conditioning disk -10 0 10 20 30 40 50 60 70 80 0 50 100 150 200 250 300 350 Number of Particles (ea) Polish Time (Hour) Ceramic conditioning disk Conventrional conditioning disk

DOI: 10.1201/9780203882955-24

[2] D. G. Thakurta, C. L. Borst, D. W. Schwendeman, R. J. Gutmann and W. N. Gill ; Thin Solid Films, vol. 366 (1-2) (2000), p.181.

DOI: 10.1016/s0040-6090(00)00748-3

[3] K. Achuthan, J. Curry, M. Lacy, D. Campbell and S. V. Babu, Journal of Electronic Materials, vol. 25 (9) (1996), p.90.

[4] J. M. Steigerwald, S. P. Muraka and R. J. Gutmann, Chemical Mechanical Planarization of Microelectronic Materials (Wiley & Sons Inc., New York 1996).

[5] T. C. Wang, T. E. Hsieh, Y. L. Wang, S. Y. Chiu, K. Yang, W. Pan and J. Sung, 5th CMP-MIC Proceeding, (2000), p.317.

[6] M. El-Shazly, R. Wielonski and S. Qamar, 6th CMP-MIC Proceeding (2001), p.332.