Diffusion Behavior at the Interface of (Ba,Sr)TiO3(BST)/Electrode/Buffer Layer/Si Epitaxial Multi-Layer Thin Film

Naoki Wakiya; Akinori Higuchi; Haruki Ryoken; Hajime Haneda; Keiichi Fukunaga; Noriyoshi Shibata; Toshimasa Suzuki; Yuji Nishi; Kazuo Shinozaki; Nobuyasu Mizutani

doi:10.4028/www.scientific.net/KEM.301.257

Paper Titles

Analysis of Composite Structures on Barium Titanate Fine Particles Using Synchrotron Radiation
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Micropatterning of Monodisperse Spherical Particles by Electrophoretic Deposition Process Using Interdigitated Microarray Electrode
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Barium Titanate Micropatterns Prepared by Electron Beam Lithography and Electrophoretic Deposition
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Dielectric Measurement of BaTiO₃ Powder and Its Statistical Analysis
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Diffusion Behavior at the Interface of (Ba,Sr)TiO₃(BST)/Electrode/Buffer Layer/Si Epitaxial Multi-Layer Thin Film
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Investigation of Domain Structure and Electrical Properties of Monoclinic Epitaxial Zirconia Buffer Layer
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Preparation and Optical Properties of Epitaxial Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ Thin Film on Si Substrates with Buffer Layer Using Pulsed Laser Deposition
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Chemical Solution Deposition of PZT/Oxide Electrode Thin Film Capacitors with Preferred Orientation on Si Substrate
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Microfabrication of Thermoelectric Hydrogen Sensor Using KOH Solution Etching
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 301Diffusion Behavior at the Interface of...

Diffusion Behavior at the Interface of (Ba,Sr)TiO₃(BST)/Electrode/Buffer Layer/Si Epitaxial Multi-Layer Thin Film

Abstract:

Diffusion behavior at the interface of (001)-epitaxially grown (Ba,Sr)TiO3(BST)/electrode/buffer layer/Si thin films was examined by use of secondary ion-microprobe mass spectrometer (SIMS) and transmission electron microscope (TEM) attached with energy dispersive X-ray fluorescence spectrometer (EDX). As the (001)-epitaxially grown film, following three kinds of structure was grown; (1)BST/(La,Sr)CoO3(LSCO)/CeO2/yttria-stabilized zirconia(YSZ)/Si, (2)BST/PLD-deposited Pt/SrTiO3(ST)/LSCO/CeO2/YSZ/Si and (3)BST/sputter-deposited Pt/ST/LSCO/CeO2/YSZ/Si. For sample (1), uphill diffusion of Sr and Ti was observed at the interface of YSZ and SiO2. Diffusion of Co into CeO2 layer was also detected. These tendencies of diffusion were also observed for samples (2) and (3). In addition to these tendencies, apparent uphill diffusion of Co at the Pt layer was observed for sample (2). However, this diffusion was not observed for sample (3). It was also observed that oxygen diffusion was prevented for sputter-deposited Pt. On the other hand, oxygen diffusion was observed for PLD-deposited Pt.

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Key Engineering Materials (Volume 301)

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257-260

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.301.257

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January 2006

Authors:

Naoki Wakiya, Akinori Higuchi, Haruki Ryoken, Hajime Haneda, Keiichi Fukunaga, Noriyoshi Shibata, Toshimasa Suzuki, Yuji Nishi, Kazuo Shinozaki, Nobuyasu Mizutani

Keywords:

Barium Strontium Titanate, Buffer Layer, Epitaxial, Film, SIMS, TEM

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