Preparation and Optical Properties of Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 Thin Film on Si Substrates with Buffer Layer Using Pulsed Laser Deposition
Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) thin films for electrooptic applications were fabricated on a Si substrate using buffer layers. The PMN-PT/SrRuO3/SrTiO3/(La,Sr)CoO3/CeO2 /YSZ/Si hetrostructure was fabricated by pulsed laser deposition. A PMN-PT thin film with a thickness of 2μm was successfully deposited. The optical characteristics of PMN-PT epitaxial film were measured by prism coupling method. The morphology of the PMN-PT films was drastically improved by introducing a mask between the target and substrate during the deposition. The PMN-PT thin film showed a columnar structure, where the width of each column was approximately 180nm. A refractive index of 2.48 with zero bias voltage was obtained for the epitaxial PMN-PT thin film using the prism coupler method.
Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
N. Nemoto et al., "Preparation and Optical Properties of Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 Thin Film on Si Substrates with Buffer Layer Using Pulsed Laser Deposition", Key Engineering Materials, Vol. 301, pp. 265-268, 2006