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HomeKey Engineering MaterialsKey Engineering Materials Vol. 301Chemical Solution Deposition of PZT/Oxide...

Chemical Solution Deposition of PZT/Oxide Electrode Thin Film Capacitors with Preferred Orientation on Si Substrate

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Abstract:

This paper describes the deposition of PZT/oxide electrode thin film capacitors on Si(100) substrate with a CSD (Chemical Solution Deposition). Highly (100)&(001)-oriented SRO/LNO electrode films with a perovskite structure were obtained by the annealing at 700 °C from a precursor solution of Sr and RuCl3·2H2O for SRO and from a precursor solution of La(NO3)3 and Ni(CH3COO)2 for LNO. In addition, highly (100)&(001)-oriented PZT/oxide electrode capacitor were deposited on SRO/LNO/Si substrate by annealing at 650 °C, showing a good ferroelectricity of Pr=22μC/cm2 and Ec=55 kV/cm. In addition, the resultant PZT/oxide electrode thin film capacitors exhibited no fatigue up to 108 switching cycles.

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Electroceramics in Japan VIII

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Periodical:

Key Engineering Materials (Volume 301)

Pages:

269-272

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.301.269

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Online since:

January 2006

Authors:

Hisao Suzuki, Yuki Miwa, Tomoya Ohno, Masayuki Fujimoto

Keywords:

CSD, Electrical Properties, Orientation Control, Perovskite-Type Oxide Electrode Thin Films, PZT/Oxide Electrode Thin Film Capacitors

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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