Chemical Solution Deposition of PZT/Oxide Electrode Thin Film Capacitors with Preferred Orientation on Si Substrate

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This paper describes the deposition of PZT/oxide electrode thin film capacitors on Si(100) substrate with a CSD (Chemical Solution Deposition). Highly (100)&(001)-oriented SRO/LNO electrode films with a perovskite structure were obtained by the annealing at 700 °C from a precursor solution of Sr and RuCl3·2H2O for SRO and from a precursor solution of La(NO3)3 and Ni(CH3COO)2 for LNO. In addition, highly (100)&(001)-oriented PZT/oxide electrode capacitor were deposited on SRO/LNO/Si substrate by annealing at 650 °C, showing a good ferroelectricity of Pr=22μC/cm2 and Ec=55 kV/cm. In addition, the resultant PZT/oxide electrode thin film capacitors exhibited no fatigue up to 108 switching cycles.

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Periodical:

Edited by:

Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki

Pages:

269-272

DOI:

10.4028/www.scientific.net/KEM.301.269

Citation:

H. Suzuki et al., "Chemical Solution Deposition of PZT/Oxide Electrode Thin Film Capacitors with Preferred Orientation on Si Substrate", Key Engineering Materials, Vol. 301, pp. 269-272, 2006

Online since:

January 2006

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$35.00

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