Chemical Solution Deposition of PZT/Oxide Electrode Thin Film Capacitors with Preferred Orientation on Si Substrate
This paper describes the deposition of PZT/oxide electrode thin film capacitors on Si(100) substrate with a CSD (Chemical Solution Deposition). Highly (100)&(001)-oriented SRO/LNO electrode films with a perovskite structure were obtained by the annealing at 700 °C from a precursor solution of Sr and RuCl3·2H2O for SRO and from a precursor solution of La(NO3)3 and Ni(CH3COO)2 for LNO. In addition, highly (100)&(001)-oriented PZT/oxide electrode capacitor were deposited on SRO/LNO/Si substrate by annealing at 650 °C, showing a good ferroelectricity of Pr=22μC/cm2 and Ec=55 kV/cm. In addition, the resultant PZT/oxide electrode thin film capacitors exhibited no fatigue up to 108 switching cycles.
Masaru Miyayama, Tadashi Takenaka, Masasuke Takata and Kazuo Shinozaki
H. Suzuki et al., "Chemical Solution Deposition of PZT/Oxide Electrode Thin Film Capacitors with Preferred Orientation on Si Substrate", Key Engineering Materials, Vol. 301, pp. 269-272, 2006